Diodes Incorporated_DMN2320UFB4-7B
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Diodes Incorporated
DMN2320UFB4-7B

278-DMN2320UFB4-7B
PDF Datasheet
MOSFET N-CH 20V 1A X2-DFN1006-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
21.7
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
71 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
0.89 nC @ 4.5 V
Typical Rise Time (ns)
6.9
PPAP
No
Channel Mode
Enhancement
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DMN2320UFB4-7B Description

DMN2320UFB4-7B Description

The DMN2320UFB4-7B is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. This Single FET is designed for applications requiring high efficiency and reliability. With its advanced technology and unique features, the DMN2320UFB4-7B stands out in the market for its superior performance and versatility.

DMN2320UFB4-7B Features

  • Input Capacitance (Ciss): The DMN2320UFB4-7B boasts a maximum input capacitance of 71 pF @ 10 V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 0.89 nC @ 4.5 V, this MOSFET offers low power consumption and high efficiency.
  • Drain to Source Voltage (Vdss): Capable of handling voltages up to 20 V, the DMN2320UFB4-7B is suitable for a wide range of applications.
  • Power Dissipation: The device can dissipate up to 520mW (Ta), making it ideal for power-intensive applications.
  • Rds On (Max): The maximum on-resistance of 320mOhm @ 500mA, 4.5V ensures low power loss and high efficiency.
  • Vgs(th) (Max): The maximum threshold voltage of 950mV @ 250µA allows for precise control and stable operation.
  • Current - Continuous Drain (Id): The DMN2320UFB4-7B can handle continuous drain currents up to 1A (Ta) at 25°C, making it suitable for high-current applications.
  • Drive Voltage: The device operates with a maximum Rds On of 1.8V and a minimum Rds On of 4.5V, providing flexibility in driving the MOSFET.
  • Mounting Type: The surface mount design of the DMN2320UFB4-7B allows for easy integration into various electronic systems.

DMN2320UFB4-7B Applications

The DMN2320UFB4-7B is ideal for applications where high efficiency, reliability, and performance are critical. Some specific use cases include:

  • Power Management: Due to its low on-resistance and high power dissipation capabilities, the DMN2320UFB4-7B is well-suited for power management systems in consumer electronics.
  • Automotive Electronics: The device's ability to handle high voltages and currents makes it an excellent choice for automotive electronic systems, such as electric vehicle chargers and power inverters.
  • Industrial Control Systems: The DMN2320UFB4-7B's robust performance and reliability make it suitable for use in industrial control systems, where precision and stability are essential.

Conclusion of DMN2320UFB4-7B

The DMN2320UFB4-7B is a versatile and high-performance MOSFET that offers numerous advantages over similar models. Its unique features, such as low input capacitance, low gate charge, and high power dissipation, make it an ideal choice for a wide range of applications, including power management, automotive electronics, and industrial control systems. With its superior performance and reliability, the DMN2320UFB4-7B is a valuable addition to any electronics engineer's toolkit.

FAQ

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Yes. DMN2320UFB4-7B currently shows 121 unit(s) in stock.
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Availability (In Stock : 121 )
Quantity Unit Price Ext. Price
1+ $0.48857 $0.49
10+ $0.47828 $4.78
30+ $0.47143 $14.14
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