Diodes Incorporated_DMN2450UFB4-7B
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Diodes Incorporated
DMN2450UFB4-7B

278-DMN2450UFB4-7B
PDF Datasheet
MOSFET N-CH 20V 1A X2-DFN1006-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
18.1
Maximum Gate Source Leakage Current (nA)
1000
Input Capacitance (Ciss) (Max) @ Vds
56 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 10 V
Typical Rise Time (ns)
2.6
PPAP
No
Channel Mode
Enhancement
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DMN2450UFB4-7B Description

DMN2450UFB4-7B Description

The DMN2450UFB4-7B is a high-performance MOSFET N-CH 20V 1A X2-DFN1006-3 device from Diodes Incorporated. This single FET is designed to deliver exceptional performance in various electronic applications. With its advanced MOSFET technology, the DMN2450UFB4-7B offers a wide range of technical specifications and performance benefits that make it an ideal choice for demanding applications.

DMN2450UFB4-7B Features

  • Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
  • Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
  • Drain to Source Voltage (Vdss): 20 V
  • Power Dissipation (Max): 500mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±12V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.21.0095

The DMN2450UFB4-7B stands out from similar models due to its low input capacitance, low gate charge, and high drain-source voltage. These features enable faster switching speeds, reduced power consumption, and improved overall performance.

DMN2450UFB4-7B Applications

The DMN2450UFB4-7B is ideal for a variety of applications where high performance and reliability are critical. Some specific use cases include:

  1. Power Management: The DMN2450UFB4-7B's low Rds On and high current handling make it suitable for power management applications, such as voltage regulation and power distribution.
  2. Motor Control: The device's high drain-source voltage and low gate charge make it an excellent choice for motor control applications, providing efficient and precise control of motor speed and torque.
  3. Automotive Electronics: The DMN2450UFB4-7B's robust performance and compliance with automotive standards make it suitable for various automotive applications, such as infotainment systems, lighting control, and engine management.
  4. Industrial Control: The device's high power dissipation and wide operating temperature range make it ideal for industrial control applications, such as motor drives, robotics, and automation systems.

Conclusion of DMN2450UFB4-7B

In conclusion, the DMN2450UFB4-7B is a high-performance MOSFET N-CH 20V 1A X2-DFN1006-3 device from Diodes Incorporated. Its unique features, such as low input capacitance, low gate charge, and high drain-source voltage, make it an ideal choice for demanding applications in power management, motor control, automotive electronics, and industrial control. With its advanced technology and compliance with industry standards, the DMN2450UFB4-7B delivers exceptional performance and reliability for a wide range of electronic applications.

FAQ

What is DMN2450UFB4-7B?
DMN2450UFB4-7B is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 381 )
Quantity Unit Price Ext. Price
10+ $0.02795 $0.28
100+ $0.02734 $2.73
300+ $0.02694 $8.08
1000+ $0.02653 $26.53
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