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DMN24H11DS-7

DMN24H11DS-7 Description

The DMN24H11DS-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for automotive applications. This MOSFET is built using advanced Metal Oxide technology, ensuring reliable performance and low power dissipation. With a maximum drain-to-source voltage of 240V and a continuous drain current of 270mA at 25°C, the DMN24H11DS-7 is ideal for various high-voltage applications.

DMN24H11DS-7 Features

• Low Input Capacitance: The DMN24H11DS-7 boasts a maximum input capacitance of 76.8 pF at 25V, enabling fast switching and reduced power consumption.
• Low Gate Charge: With a maximum gate charge of 3.7 nC at 10V, this MOSFET minimizes switching losses and improves overall efficiency.
• Robust Voltage Ratings: The DMN24H11DS-7 can handle a maximum gate-source voltage of ±20V and a drain-to-source voltage of 240V, making it suitable for high-voltage applications.
• Surface Mount Packaging: The DMN24H11DS-7 is available in a compact SOT23 package, ideal for space-constrained designs.
• Automotive Grade: This MOSFET meets the stringent requirements of the automotive industry, ensuring reliable operation in harsh environments.
• RoHS3 Compliance: The DMN24H11DS-7 is compliant with RoHS3 regulations, making it suitable for environmentally friendly applications.

DMN24H11DS-7 Applications

The DMN24H11DS-7 is an excellent choice for various high-voltage applications, including:

• Automotive Electronics: Due to its automotive grade rating, this MOSFET is ideal for use in automotive power electronics, such as battery management systems and electric vehicle chargers.
• Industrial Control Systems: The DMN24H11DS-7 can be used in high-voltage motor drives and industrial control systems that require precise control and low power dissipation.
• Power Supplies: This MOSFET is suitable for high-voltage power supply applications, such as switching power supplies and DC-DC converters.
• Telecommunications: The DMN24H11DS-7 can be used in telecommunications equipment that requires high-voltage switching and low power dissipation.

Conclusion of DMN24H11DS-7

The DMN24H11DS-7 is a versatile and high-performance N-Channel MOSFET from Diodes Incorporated, designed for demanding automotive and industrial applications. Its low input capacitance, low gate charge, and robust voltage ratings make it an ideal choice for high-voltage switching applications. With its compact SOT23 package and automotive grade rating, the DMN24H11DS-7 offers a reliable and efficient solution for a wide range of applications.