Diodes Incorporated_DMN3065LW-13
original

Diodes Incorporated
DMN3065LW-13

278-DMN3065LW-13
PDF Datasheet
MOSFET N-CH 30V 4A SOT323
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
10.3
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 10 V
Typical Rise Time (ns)
1.6
PPAP
No
Channel Mode
Enhancement
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DMN3065LW-13 Description

DMN3065LW-13 Description

The DMN3065LW-13 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring high efficiency and reliability. With a continuous drain current of 4A and a drain-to-source voltage of 30V, this device is ideal for power management and motor control applications. The DMN3065LW-13 features a low on-resistance of 52mOhm at 4A and 10V, ensuring minimal power loss and high efficiency. The device is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

DMN3065LW-13 Features

  • Low On-Resistance: 52mOhm at 4A and 10V, reducing power loss and improving efficiency.
  • High Drain Current: 4A continuous drain current, suitable for demanding power management applications.
  • High Drain-to-Source Voltage: 30V, supporting high-voltage applications.
  • Low Gate Charge: 11.7 nC at 10V, reducing switching losses and improving efficiency.
  • Low Input Capacitance: 465 pF at 15V, minimizing parasitic effects and improving high-frequency performance.
  • Robust Temperature Range: Operates at temperatures up to 150°C, ensuring reliable performance in harsh environments.
  • Surface Mount Package: SOT323 package
  • RoHS3 Compliance: Suitable for environmentally conscious designs.
  • REACH Unaffected: Compliant with European Union regulations.

DMN3065LW-13 Applications

The DMN3065LW-13 is ideal for a variety of applications, including:

  • Power Management: High efficiency and low on-resistance make it suitable for power supply designs.
  • Motor Control: Capable of handling high currents and voltages, making it ideal for motor drive applications.
  • Automotive Electronics: Robust temperature range and high reliability make it suitable for automotive applications.
  • Industrial Control: High performance and reliability make it suitable for industrial control systems.

Conclusion of DMN3065LW-13

The DMN3065LW-13 from Diodes Incorporated is a high-performance N-Channel MOSFET, offering a combination of low on-resistance, high drain current, and high drain-to-source voltage. Its low gate charge and input capacitance ensure efficient operation, while its robust temperature range and RoHS3 compliance make it suitable for a wide range of applications. With its advanced features and performance, the DMN3065LW-13 is an excellent choice for power management, motor control, automotive electronics, and industrial control applications.

FAQ

What package or case is DMN3065LW-13 available in?
DMN3065LW-13 is available in the SC-70, SOT-323 package / case.
What operating temperature range does DMN3065LW-13 support?
What is DMN3065LW-13?
What is the mounting type of DMN3065LW-13?
What is the standard lead time for DMN3065LW-13?
Availability (In Stock : 33 )
Quantity Unit Price Ext. Price
5+ $0.17537 $0.88
50+ $0.17185 $8.59
150+ $0.16952 $25.43
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