Diodes Incorporated_DMN3067LW-7
original

Diodes Incorporated
DMN3067LW-7

278-DMN3067LW-7
PDF Datasheet
MOSFET N-CH 30V 2.6A SOT-323
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
15
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
447 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V
Typical Rise Time (ns)
5.2
PPAP
No
Channel Mode
Enhancement
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DMN3067LW-7 Description

DMN3067LW-7 Description

The DMN3067LW-7 is a high-performance MOSFET (Metal Oxide) from Diodes Incorporated, designed for applications requiring efficient power management and control. With a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.6A at 25°C, this N-channel device is capable of handling a wide range of power requirements. Its low on-resistance (Rds On) of 67mOhm at 2.5A and 4.5V ensures minimal power loss, while the maximum gate-source voltage (Vgs) of ±12V provides robust control over the device.

DMN3067LW-7 Features

  • Low On-Resistance: The DMN3067LW-7 boasts a low Rds On of 67mOhm at 2.5A and 4.5V, reducing power dissipation and improving efficiency.
  • High Drain Voltage: With a Vdss of 30V, this MOSFET can handle high voltage applications, making it suitable for power electronics and motor control.
  • Robust Gate Control: The maximum Vgs of ±12V allows for precise control over the device's operation.
  • Low Gate Charge: The maximum gate charge (Qg) of 4.6nC at 4.5V reduces switching losses and improves overall efficiency.
  • Surface Mount Packaging: The SOT-323 package enables easy integration into surface mount applications, reducing footprint and improving reliability.
  • Compliance: The DMN3067LW-7 is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1, making it suitable for a wide range of applications.

DMN3067LW-7 Applications

The DMN3067LW-7 is ideal for applications where high efficiency, low power loss, and robust control are required. Some specific use cases include:

  • Power Electronics: Due to its high Vdss and low Rds On, this MOSFET is well-suited for power conversion and management in electronic devices.
  • Motor Control: The device's ability to handle high currents and voltages makes it an excellent choice for motor drive applications, such as in industrial automation and robotics.
  • Automotive Electronics: The DMN3067LW-7 can be used in various automotive applications, such as electric power steering and battery management systems, where high reliability and performance are critical.

Conclusion of DMN3067LW-7

The DMN3067LW-7 from Diodes Incorporated is a versatile and high-performance MOSFET designed for demanding power management applications. Its combination of low on-resistance, high drain voltage, and robust gate control make it an excellent choice for power electronics, motor control, and automotive electronics. With its compliance to industry standards and surface mount packaging, the DMN3067LW-7 offers a reliable and efficient solution for a wide range of applications.

FAQ

What is the mounting type of DMN3067LW-7?
DMN3067LW-7 uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for DMN3067LW-7?
Is DMN3067LW-7 currently in stock?
What operating temperature range does DMN3067LW-7 support?
What package or case is DMN3067LW-7 available in?
Availability (In Stock : 17099 )
Quantity Unit Price Ext. Price
50+ $0.07405 $3.70
150+ $0.06487 $9.73
500+ $0.05800 $29.00
3000+ $0.05248 $157.44
6000+ $0.04973 $298.38
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