Diodes Incorporated_DMN3110LCP3-7
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Diodes Incorporated
DMN3110LCP3-7

278-DMN3110LCP3-7
PDF Datasheet
MOSFET N-CH 30V 3.2A 3DFN

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
1.52 nC @ 4.5 V
Product Status
Obsolete
Supplier Device Package
X2-DFN1006-3
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
1.38W
Package / Case
3-XFDFN
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DMN3110LCP3-7 Description

DMN3110LCP3-7 Description

The DMN3110LCP3-7 is a high-performance N-Channel MOSFET designed and manufactured by Diodes Incorporated. This device is part of the Single FETs, MOSFETs category and is offered in a compact 3DFN package. With a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.2A at 25°C, the DMN3110LCP3-7 is well-suited for various power management and switching applications.

DMN3110LCP3-7 Features

  • Technology: MOSFET (Metal Oxide) - This technology offers high efficiency and low power consumption.
  • Input Capacitance (Ciss): 150 pF @ 15 V - Minimizes input capacitance, reducing power loss and improving switching performance.
  • Gate Charge (Qg): 1.52 nC @ 4.5 V - Low gate charge enables faster switching speeds and reduced power dissipation.
  • Rds On (Max): 69 mΩ @ 500 mA, 8 V - Offers low on-resistance, minimizing power loss and improving efficiency.
  • Vgs(th) (Max): 1.1 V @ 250 µA - Provides a low threshold voltage for easier gate drive and reduced power consumption.
  • Mounting Type: Surface Mount - Facilitates integration into compact and space-constrained designs.
  • REACH Status: REACH Unaffected - Complies with European Union regulations on the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH).
  • RoHS Status: ROHS3 Compliant - Meets the European Union's Restriction of Hazardous Substances (RoHS) directive.

DMN3110LCP3-7 Applications

The DMN3110LCP3-7 is ideal for applications that require high efficiency, low power consumption, and compact form factors. Some specific use cases include:

  1. Power Management: In battery-powered devices, such as smartphones, tablets, and laptops, where efficiency and power consumption are critical.
  2. Motor Control: For driving small to medium-sized motors in applications like robotics, drones, and industrial automation.
  3. Switching Regulators: In DC-DC converters and other power conversion circuits, where low on-resistance and fast switching speeds are essential.
  4. Audio Amplifiers: For driving speakers and other audio components, where low distortion and high efficiency are desired.

Conclusion of DMN3110LCP3-7

The DMN3110LCP3-7 is a versatile and high-performance N-Channel MOSFET that offers a unique combination of low on-resistance, fast switching speeds, and low power consumption. Its compact 3DFN package and REACH and RoHS compliance make it suitable for a wide range of applications in the electronics industry. While the product is now obsolete, its performance benefits and unique features make it a valuable choice for designers looking to optimize power efficiency and minimize space in their designs.

FAQ

What voltage specification is listed for DMN3110LCP3-7?
The listed voltage-related specification for DMN3110LCP3-7 is 30 V.
What is DMN3110LCP3-7?
Is DMN3110LCP3-7 currently in stock?
What is the mounting type of DMN3110LCP3-7?
Does DMN3110LCP3-7 have quantity-based pricing?
Availability (In Stock : 8 )
Quantity Unit Price Ext. Price
1+ $0.41939 $0.42
10+ $0.35148 $3.51
30+ $0.32239 $9.67
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