Diodes Incorporated_DMN3200U-7
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Diodes Incorporated
DMN3200U-7

278-DMN3200U-7
PDF Datasheet
MOSFET N-CH 30V 2.2A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
471
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 10 V
Typical Rise Time (ns)
43.1
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
40.2
Product Status
Active
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DMN3200U-7 Description

DMN3200U-7 Description

The DMN3200U-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring low on-resistance and high efficiency. With a maximum drain-to-source voltage of 30V and a continuous drain current of 2.2A at 25°C, this device delivers outstanding performance in a compact SOT23-3 package. The DMN3200U-7 is manufactured using advanced MOSFET technology, ensuring high reliability and excellent electrical characteristics.

DMN3200U-7 Features

  • Low On-Resistance: The DMN3200U-7 boasts a maximum on-resistance of 90mOhm at a drain current of 2.2A and a gate-source voltage of 4.5V, enabling efficient power delivery with minimal power loss.
  • High Input Capacitance: With a maximum input capacitance of 290pF at 10V, this MOSFET offers fast switching speeds and improved high-frequency performance.
  • Robust Voltage Ratings: The DMN3200U-7 can handle a maximum drain-to-source voltage of 30V and a maximum gate-source voltage of ±8V, making it suitable for a wide range of applications.
  • Surface Mount Package: The SOT23-3 package allows for easy integration into surface-mount PCB designs, reducing overall footprint and improving manufacturing efficiency.
  • Compliance with Industry Standards: The DMN3200U-7 is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with environmental and trade regulations.

DMN3200U-7 Applications

The DMN3200U-7 is ideal for a variety of applications where high efficiency, low power loss, and compact form factor are critical:

  1. Power Management: In power supply designs, the DMN3200U-7's low on-resistance and high current capability make it an excellent choice for power switching and regulation.
  2. Motor Control: The DMN3200U-7's ability to handle high currents and voltages makes it suitable for motor drive applications, including brushless DC motors and stepper motors.
  3. Audio Amplifiers: In audio amplifiers, the DMN3200U-7's fast switching speeds and low on-resistance contribute to improved audio quality and reduced distortion.
  4. Automotive Electronics: The DMN3200U-7's robust voltage and current ratings make it suitable for various automotive applications, such as infotainment systems and power windows.

Conclusion of DMN3200U-7

The DMN3200U-7 from Diodes Incorporated is a versatile and high-performance N-Channel MOSFET that offers a unique combination of low on-resistance, high efficiency, and compact packaging. Its excellent electrical characteristics, combined with compliance with industry standards, make it an ideal choice for a wide range of applications in power management, motor control, audio amplification, and automotive electronics. With its advanced MOSFET technology and commitment to quality, the DMN3200U-7 is a reliable and cost-effective solution for demanding electronic designs.

FAQ

Does DMN3200U-7 have quantity-based pricing?
Yes. DMN3200U-7 currently has 4 pricing tier(s), starting from 5 units.
What package or case is DMN3200U-7 available in?
Is DMN3200U-7 currently in stock?
What operating temperature range does DMN3200U-7 support?
What is DMN3200U-7?
Availability (In Stock : 5276 )
Quantity Unit Price Ext. Price
5+ $0.13165 $0.66
50+ $0.10460 $5.23
150+ $0.09108 $13.66
500+ $0.08095 $40.47
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