Diodes Incorporated_DMN53D0LT-7
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Diodes Incorporated
DMN53D0LT-7

278-DMN53D0LT-7
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DIODE
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
19
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V
Typical Rise Time (ns)
2.5
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
2.7
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DMN53D0LT-7 Description

DMN53D0LT-7 Description

The DMN53D0LT-7 is a high-performance MOSFET (Metal Oxide) developed by Diodes Incorporated. This single FET is designed to deliver exceptional performance in various electronic applications. With a maximum drain-source voltage (Vdss) of 50V, it can handle high voltage requirements. The device is also capable of dissipating up to 300mW of power, making it suitable for power management applications. The DMN53D0LT-7 is RoHS3 compliant and REACH unaffected, ensuring environmental compliance.

DMN53D0LT-7 Features

  • Input Capacitance (Ciss): The DMN53D0LT-7 boasts a maximum input capacitance of 46 pF at 25V, ensuring fast switching speeds and low power consumption.
  • Gate Charge (Qg): With a maximum gate charge of 0.6 nC at 4.5V, this MOSFET minimizes switching losses and improves efficiency.
  • Rds On (Max): The device offers a low on-resistance of 1.6 Ohms at 500mA and 10V, reducing power dissipation and improving performance.
  • Vgs(th) (Max): The DMN53D0LT-7 has a maximum threshold voltage of 1.5V at 250µA, ensuring reliable operation across a wide range of input voltages.
  • Current - Continuous Drain (Id): This MOSFET can handle continuous drain currents of up to 350mA at 25°C, making it suitable for high-current applications.
  • Drive Voltage: The device can be driven with a maximum Rds On voltage of 2.5V and a minimum Rds On voltage of 10V, providing flexibility in circuit design.
  • Mounting Type: The DMN53D0LT-7 is available in a surface mount package, making it ideal for compact and space-constrained applications.

DMN53D0LT-7 Applications

The DMN53D0LT-7 is an ideal choice for various applications due to its high performance and versatility:

  1. Power Management: Its high voltage and current handling capabilities make it suitable for power management circuits in consumer electronics.
  2. Automotive Electronics: The device's robust performance and reliability make it ideal for automotive applications, such as infotainment systems and powertrain control.
  3. Industrial Control: The DMN53D0LT-7 can be used in industrial control systems, where high voltage and current handling are required.
  4. Telecommunications: This MOSFET is suitable for telecommunications equipment, such as routers and switches, where high-speed switching and low power consumption are crucial.

Conclusion of DMN53D0LT-7

The DMN53D0LT-7 is a versatile and high-performance MOSFET that offers exceptional technical specifications and performance benefits. Its unique features, such as low input capacitance, low gate charge, and high current handling capabilities, make it an ideal choice for a wide range of applications, including power management, automotive electronics, industrial control, and telecommunications. With its RoHS3 compliance and REACH unaffected status, the DMN53D0LT-7 is not only a powerful solution but also an environmentally responsible choice for your electronic design needs.

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