Diodes Incorporated_DMN55D0UT-7
original

Diodes Incorporated
DMN55D0UT-7

278-DMN55D0UT-7
PDF Datasheet
MOSFET N-CH 50V 160MA SOT-523
78 weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
23.4
Maximum Gate Source Leakage Current (nA)
5000
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V
Typical Rise Time (ns)
4.4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
6
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DMN55D0UT-7 Description

DMN55D0UT-7 Description

The DMN55D0UT-7 is a single N-Channel MOSFET from Diodes Incorporated, designed for high performance in various electronic applications. With a maximum drain-to-source voltage of 50V and a continuous drain current of 160mA at 25°C, this device offers robust power handling capabilities. Its low input capacitance of 25pF at 10V ensures fast switching speeds, while the maximum power dissipation of 200mW allows for efficient operation in demanding environments.

DMN55D0UT-7 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 25 pF @ 10 V - Enables fast switching and reduced power consumption.
  • Drain to Source Voltage (Vdss): 50 V - Suitable for applications requiring high voltage handling.
  • Power Dissipation (Max): 200mW (Ta) - Ensures efficient operation in high-power applications.
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 100mA, 4V - Offers low on-resistance for improved performance.
  • Vgs(th) (Max) @ Id: 1V @ 250µA - Provides a low threshold voltage for easy gate drive.
  • Mounting Type: Surface Mount - Facilitates integration into compact and space-constrained designs.

DMN55D0UT-7 Applications

The DMN55D0UT-7 is ideal for a variety of applications where high performance and reliability are critical:

  1. Power Management: Its high voltage and current ratings make it suitable for power supply designs.
  2. Automotive Electronics: The device's robustness and low on-resistance are well-suited for automotive applications.
  3. Industrial Control Systems: The DMN55D0UT-7's ability to handle high voltages and currents makes it an excellent choice for industrial control systems.
  4. Consumer Electronics: Its compact surface-mount package and low input capacitance make it ideal for space-constrained consumer electronics.

Conclusion of DMN55D0UT-7

The DMN55D0UT-7 from Diodes Incorporated is a high-performance N-Channel MOSFET designed for demanding applications. Its unique combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for power management, automotive electronics, industrial control systems, and consumer electronics. While the product is now obsolete, its performance benefits and unique features make it a valuable option for legacy systems and applications where high reliability and performance are essential.

FAQ

What operating temperature range does DMN55D0UT-7 support?
DMN55D0UT-7 has an operating temperature range of -55°C ~ 150°C (TJ).
Are there related or alternative parts for DMN55D0UT-7?
What is the mounting type of DMN55D0UT-7?
Is DMN55D0UT-7 currently in stock?
What package or case is DMN55D0UT-7 available in?
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