Diodes Incorporated
DMN6068SEQ-13
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DMN6068SEQ-13 Description
DMN6068SEQ-13 Description
The DMN6068SEQ-13 is a high-performance MOSFET from Diodes Incorporated, designed for automotive applications. This single FET features a wide voltage range of 41V to 60V and is available in a compact SOT223 package, making it suitable for space-constrained designs. With a maximum power dissipation of 2W and a low Rds On of 68mOhm at 12A and 10V, the DMN6068SEQ-13 offers excellent efficiency and performance in demanding applications.
DMN6068SEQ-13 Features
- Wide voltage range (41V to 60V) for versatile applications
- Low Rds On of 68mOhm at 12A and 10V for high efficiency
- Maximum power dissipation of 2W for reliable operation
- Compact SOT223 package for space-constrained designs
- Automotive-grade device for harsh environment applications
- REACH Unaffected and ROHS3 Compliant for environmental compliance
- Moisture Sensitivity Level 1 for unlimited storage time
- Drive voltage range of 4.5V to 10V for flexible gate control
DMN6068SEQ-13 Applications
The DMN6068SEQ-13 is ideal for a variety of automotive applications, including:
- Power windows and seats
- Lighting systems (headlights, taillights, and interior lights)
- Engine control modules
- Battery management systems
- In-vehicle infotainment systems
Its low Rds On and high efficiency make it suitable for applications where power loss needs to be minimized, while its automotive-grade rating ensures reliable operation in harsh environments.
Conclusion of DMN6068SEQ-13
The DMN6068SEQ-13 is a versatile and high-performance MOSFET from Diodes Incorporated, offering a wide voltage range, low Rds On, and excellent efficiency. Its automotive-grade rating, compact package, and environmental compliance make it an ideal choice for a variety of automotive applications, including power windows, lighting systems, and engine control modules. With its unique combination of performance, reliability, and compliance, the DMN6068SEQ-13 stands out as a superior option in the crowded market of MOSFETs.



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