Diodes Incorporated_DMN6069SE-13
original

Diodes Incorporated
DMN6069SE-13

278-DMN6069SE-13
PDF Datasheet
MOSFET N-CH 60V 4.3A/10A SOT223
8 Weeks

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Tech Specifications

Configuration
Single Dual Drain
Typical Turn-Off Delay Time (ns)
16
Input Capacitance (Ciss) (Max) @ Vds
825 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Typical Rise Time (ns)
6.7
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
3.8
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DMN6069SE-13 Description

DMN6069SE-13 Description

The DMN6069SE-13 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for automotive applications. It features a 60V drain-to-source voltage (Vdss) rating and can handle continuous drain currents of 4.3A at 25°C ambient temperature and 10A at case temperature. This MOSFET is designed to offer low on-resistance (Rds On) of 69mOhm at 3A drain current and 10V gate-source voltage, ensuring high efficiency in power management applications.

DMN6069SE-13 Features

  • Low On-Resistance: With a maximum Rds On of 69mOhm at 3A and 10V, the DMN6069SE-13 provides high efficiency and reduced power loss.
  • High Drain Current: Capable of handling 4.3A continuous drain current at 25°C and 10A at case temperature, making it suitable for high-current applications.
  • Low Gate Threshold Voltage: A maximum Vgs(th) of 3V at 250µA ensures easy gate drive and reduced power consumption.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications, with a moisture sensitivity level (MSL) of 1 and compliance with the REACH and RoHS3 standards.
  • Surface Mount Package: The SOT223 package enables easy integration into surface-mount applications, providing a compact and reliable solution.

DMN6069SE-13 Applications

The DMN6069SE-13 is ideal for a variety of automotive and industrial applications where high efficiency, low power loss, and robust performance are required. Some specific use cases include:

  • Power Management: In automotive systems such as battery management, power conversion, and motor control.
  • LED Lighting: For high-brightness LED lighting systems in vehicles, where high efficiency and low thermal dissipation are critical.
  • Industrial Control: In motor drives, power supplies, and other high-current control applications where reliability and performance are essential.

Conclusion of DMN6069SE-13

The DMN6069SE-13 from Diodes Incorporated is a high-performance N-Channel MOSFET designed for demanding automotive and industrial applications. Its combination of low on-resistance, high drain current capability, and robust automotive-grade features make it an ideal choice for power management, LED lighting, and industrial control applications. With its compact SOT223 package and surface-mount design, the DMN6069SE-13 offers a reliable and efficient solution for high-current applications in a wide range of environments.

FAQ

What is DMN6069SE-13?
DMN6069SE-13 is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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