Diodes Incorporated_DMN6075S-7
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Diodes Incorporated
DMN6075S-7

278-DMN6075S-7
PDF Datasheet
MOSFET N-CH 60V 2A SOT23
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
35
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
12.3 nC @ 10 V
Typical Rise Time (ns)
4.1
PPAP
No
Channel Mode
Enhancement
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DMN6075S-7 Description

DMN6075S-7 Description

The DMN6075S-7 is a high-performance, single N-channel MOSFET from Diodes Incorporated. This device is designed for applications requiring efficient power management and high-speed switching. With a drain-to-source voltage of 60V and a continuous drain current of 2A at 25°C, the DMN6075S-7 is ideal for a wide range of electronic systems.

DMN6075S-7 Features

  • High Input Capacitance (Ciss): The DMN6075S-7 boasts an impressive maximum input capacitance of 606 pF at 20V, ensuring fast signal processing and minimal signal loss.
  • Low Gate Charge (Qg): With a maximum gate charge of 12.3 nC at 10V, this MOSFET minimizes power consumption during switching, improving overall efficiency.
  • Robust Power Dissipation: Capable of handling up to 800mW of power dissipation at ambient temperature, the DMN6075S-7 is suitable for demanding applications.
  • Surface Mount Technology: The DMN6075S-7 is designed for surface mount applications, making it ideal for space-constrained designs.
  • Compliance with Industry Standards: This MOSFET is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring compliance with environmental and trade regulations.

DMN6075S-7 Applications

The DMN6075S-7 is well-suited for various applications, including:

  • Power Management: Due to its high voltage and current ratings, the DMN6075S-7 is ideal for power management in consumer electronics and industrial systems.
  • Automotive Electronics: The device's robustness and compliance with industry standards make it suitable for automotive applications, such as electric vehicle chargers and power control units.
  • Telecommunications: The high input capacitance and low gate charge of the DMN6075S-7 make it an excellent choice for high-speed switching in telecommunications equipment.

Conclusion of DMN6075S-7

The DMN6075S-7 from Diodes Incorporated is a versatile and high-performance MOSFET, offering a combination of high input capacitance, low gate charge, and robust power dissipation. Its compliance with industry standards and surface mount design make it an ideal choice for a wide range of applications, from power management to automotive electronics. With the DMN6075S-7, designers can achieve efficient power management and high-speed switching in their electronic systems.

FAQ

What package or case is DMN6075S-7 available in?
DMN6075S-7 is available in the TO-236-3, SC-59, SOT-23-3 package / case.
Is DMN6075S-7 currently in stock?
What is DMN6075S-7?
What is the mounting type of DMN6075S-7?
What operating temperature range does DMN6075S-7 support?
Availability (In Stock : 165671 )
Quantity Unit Price Ext. Price
50+ $0.08195 $4.10
150+ $0.07080 $10.62
500+ $0.06245 $31.22
3000+ $0.05299 $158.97
6000+ $0.04964 $297.84
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