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DMN62D0LFD-7

DMN62D0LFD-7 Description

The DMN62D0LFD-7 is a high-performance MOSFET (Metal Oxide) from Diodes Incorporated, designed for use in a variety of electronic applications. This N-Channel device offers a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 310mA at 25°C. With a low on-resistance (Rds On) of 2Ω at 100mA and 4V, the DMN62D0LFD-7 provides efficient power management and reduced power loss in your designs.

DMN62D0LFD-7 Features

• Input Capacitance (Ciss): 31 pF @ 25V
• Gate Charge (Qg): 0.5 nC @ 4.5V
• Drain to Source Voltage (Vdss): 60V
• Power Dissipation (Max): 480mW (Ta)
• Rds On (Max): 2Ω @ 100mA, 4V
• Vgs(th) (Max): 1V @ 250µA
• Current - Continuous Drain (Id): 310mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Mounting Type: Surface Mount
• Package: Tape & Reel (TR)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

DMN62D0LFD-7 Applications

The DMN62D0LFD-7 is ideal for applications requiring high efficiency and low power loss, such as:

1. Power Management: Efficient power switching in power supply circuits.
2. Audio Amplifiers: Low distortion and high fidelity audio amplification.
3. Motor Control: Precise control of motor speed and torque in various applications.
4. Automotive Electronics: Reliable operation in harsh automotive environments.
5. Industrial Control: Durable and efficient operation in industrial automation systems.

Conclusion of DMN62D0LFD-7

The DMN62D0LFD-7 from Diodes Incorporated offers a combination of high performance, low power loss, and robust reliability, making it an excellent choice for a wide range of electronic applications. Its unique features, such as low on-resistance and high drain-source voltage, provide significant advantages over similar models. Whether you're designing power management circuits, audio amplifiers, or motor control systems, the DMN62D0LFD-7 is a reliable and efficient solution.