Diodes Incorporated_DMN62D1LFB-7B
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Diodes Incorporated
DMN62D1LFB-7B

278-DMN62D1LFB-7B
PDF Datasheet
MOSFET N-CH 60V 320MA 3DFN
8 Weeks

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Tech Specifications

PCB changed
3
HTS
8541.21.00.95
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
64 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 4.5 V
ECCN (US)
EAR99
PPAP
No
Product Status
Active
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DMN62D1LFB-7B Description

DMN62D1LFB-7B Description

The DMN62D1LFB-7B is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for a wide range of applications in the electronics industry. This MOSFET offers superior technical specifications and performance benefits, making it an ideal choice for various applications.

DMN62D1LFB-7B Features

  • Technology: MOSFET (Metal Oxide)
  • Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
  • Drain to Source Voltage (Vdss): 60 V
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Base Product Number: DMN62

Unique features and advantages of the DMN62D1LFB-7B include its low gate charge, low input capacitance, and high drain-source voltage, making it suitable for high-speed switching applications. The device's low Rds On and high current capability also contribute to its superior performance in power management and amplification applications.

DMN62D1LFB-7B Applications

The DMN62D1LFB-7B is ideal for various applications, including:

  1. Power Management: Its low Rds On and high current capability make it suitable for power management applications, such as voltage regulation and power conversion.
  2. Amplification: The device's low gate charge and high drain-source voltage make it an excellent choice for audio and video amplification applications.
  3. Switching: Its high-speed switching capabilities make it ideal for applications requiring fast switching times, such as motor control and load switching.

Conclusion of DMN62D1LFB-7B

The DMN62D1LFB-7B is a versatile and high-performance N-Channel MOSFET from Diodes Incorporated. Its unique features, such as low gate charge, low input capacitance, and high drain-source voltage, make it an ideal choice for a wide range of applications in the electronics industry. With its superior performance and unique advantages over similar models, the DMN62D1LFB-7B is a reliable and efficient solution for power management, amplification, and switching applications.

FAQ

What voltage specification is listed for DMN62D1LFB-7B?
The listed voltage-related specification for DMN62D1LFB-7B is 60 V.
What package or case is DMN62D1LFB-7B available in?
Are there related or alternative parts for DMN62D1LFB-7B?
Is DMN62D1LFB-7B currently in stock?
What is DMN62D1LFB-7B?
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