Diodes Incorporated_DMN63D8LDW-13
original

Diodes Incorporated
DMN63D8LDW-13

289-DMN63D8LDW-13
PDF Datasheet
MOSFET 2N-CH 30V 0.22A SOT363
8 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
12
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Typical Rise Time (ns)
3.2
PPAP
No
Channel Mode
Enhancement
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DMN63D8LDW-13 Description

DMN63D8LDW-13 Description

The DMN63D8LDW-13 from Diodes Incorporated is a dual N-channel 30V logic-level MOSFET designed for high-efficiency, low-power applications. Packaged in a compact SOT-363 form factor, it features a surface-mount design, making it ideal for space-constrained PCB layouts. With a continuous drain current (Id) of 220mA and a low Rds(on) of 2.8Ω @ 10V, this MOSFET delivers efficient switching performance while minimizing power dissipation. Its low gate charge (Qg) of 0.87nC @ 10V and input capacitance (Ciss) of 22pF @ 25V ensure fast switching speeds, reducing losses in high-frequency applications.

DMN63D8LDW-13 Features

  • Logic-Level Gate: Ensures compatibility with 3.3V/5V microcontrollers, eliminating the need for additional gate drivers.
  • Low Threshold Voltage (Vgs(th)): 1.5V @ 250µA enables reliable operation in low-voltage circuits.
  • High Efficiency: Optimized Rds(on) and Qg reduce conduction and switching losses.
  • Robust Packaging: Tape & Reel (TR) packaging supports automated assembly processes.
  • Environmental Compliance: ROHS3 Compliant and REACH Unaffected, meeting stringent environmental standards.
  • Wide Operating Range: 30V Vdss and 300mW max power dissipation suit diverse applications.

DMN63D8LDW-13 Applications

  • Portable Electronics: Ideal for battery-powered devices due to low power consumption and small footprint.
  • Signal Switching: Used in analog/digital multiplexing and load switching circuits.
  • IoT & Wearables: Efficient power management in sensors, wearables, and edge devices.
  • Automotive Systems: Suitable for low-voltage auxiliary circuits in infotainment and lighting controls.
  • Consumer Electronics: Enhances efficiency in smartphones, tablets, and USB peripherals.

Conclusion of DMN63D8LDW-13

The DMN63D8LDW-13 stands out for its low-voltage operation, compact size, and high efficiency, making it a superior choice for modern electronics requiring minimal power loss and fast switching. Its compliance with ROHS3 and REACH ensures environmental safety, while its SOT-363 package enables high-density PCB designs. Whether for IoT, portable gadgets, or automotive subsystems, this MOSFET delivers reliable performance and energy savings, positioning it as a versatile solution for next-generation applications.

FAQ

What voltage specification is listed for DMN63D8LDW-13?
The listed voltage-related specification for DMN63D8LDW-13 is 30V.
What operating temperature range does DMN63D8LDW-13 support?
What is the mounting type of DMN63D8LDW-13?
What package or case is DMN63D8LDW-13 available in?
What is the standard lead time for DMN63D8LDW-13?
Availability (In Stock : 1540 )
Quantity Unit Price Ext. Price
10+ $0.04380 $0.44
100+ $0.04280 $4.28
300+ $0.04216 $12.65
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