Diodes Incorporated_DMN67D8LW-13
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Diodes Incorporated
DMN67D8LW-13

278-DMN67D8LW-13
PDF Datasheet
MOSFET N-CH 60V 240MA SOT323
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
7.6
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
0.82 nC @ 10 V
Typical Rise Time (ns)
3
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
2.8
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DMN67D8LW-13 Description

DMN67D8LW-13 Description

The DMN67D8LW-13 is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. It is a Single FET, specifically an N-Channel device, designed for applications requiring a 60V drain-to-source voltage and a continuous drain current of 240mA at 25°C. This device is surface-mountable and is packaged in a Tape & Reel (TR) format, making it suitable for automated assembly processes. With its low gate charge and input capacitance, the DMN67D8LW-13 offers fast switching capabilities and low power consumption, making it ideal for a variety of electronic applications.

DMN67D8LW-13 Features

  • Low Gate Charge (Qg) and Input Capacitance (Ciss): The DMN67D8LW-13 has a maximum gate charge of 0.82 nC @ 10 V and an input capacitance of 22 pF @ 25 V. These low values contribute to the device's fast switching performance and reduced power consumption.
  • High Drain-to-Source Voltage (Vdss): With a Vdss of 60V, the DMN67D8LW-13 can handle high voltage applications, making it suitable for use in power electronics and other demanding environments.
  • Low Rds On (Max): The device has a maximum Rds On of 5 Ohms @ 500mA, 10V, ensuring low on-resistance and high efficiency in conduction.
  • Compliance with Industry Standards: The DMN67D8LW-13 is compliant with the RoHS3 standard, indicating its use of environmentally friendly materials, and is REACH Unaffected, meaning it does not contain any substances of very high concern (SVHC) listed under the REACH regulation.
  • Wide Operating Temperature Range: The device is designed to operate over a wide temperature range, making it suitable for use in various environmental conditions.

DMN67D8LW-13 Applications

The DMN67D8LW-13 is ideal for use in a variety of applications where high voltage, low power consumption, and fast switching are required. Some specific use cases include:

  • Power Electronics: Due to its high Vdss and low Rds On, the DMN67D8LW-13 is well-suited for use in power electronics, such as power supplies and motor control applications.
  • Automotive Electronics: The device's ability to handle high voltages and its compliance with industry standards make it an excellent choice for automotive electronics, such as electric vehicle charging systems and battery management systems.
  • Industrial Control Systems: The DMN67D8LW-13's fast switching capabilities and low power consumption make it ideal for use in industrial control systems, where precise control and efficiency are critical.

Conclusion of DMN67D8LW-13

The DMN67D8LW-13 is a versatile and high-performance MOSFET device that offers a combination of high voltage handling, low power consumption, and fast switching capabilities. Its compliance with industry standards and wide operating temperature range make it suitable for a variety of applications, particularly in power electronics, automotive electronics, and industrial control systems. With its unique features and advantages, the DMN67D8LW-13 stands out as a reliable and efficient solution for demanding electronic applications.

FAQ

What is DMN67D8LW-13?
DMN67D8LW-13 is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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