Diodes Incorporated_DMP10H4D2S-7
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Diodes Incorporated
DMP10H4D2S-7

278-DMP10H4D2S-7
PDF Datasheet
MOSFET P-CH 100V 270MA SOT23
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
8.4
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
87 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V
Typical Rise Time (ns)
2.6
PPAP
No
Channel Mode
Enhancement
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DMP10H4D2S-7 Description

DMP10H4D2S-7 is a high-power discrete transistor offered by Diodes Incorporated. It is a high-frequency, high-voltage, and high-power transistor that is designed for use in a wide range of applications.

Description:

The DMP10H4D2S-7 is a high-power transistor that is built using advanced manufacturing processes and high-quality materials. It has a high breakdown voltage and a low on-resistance, which makes it suitable for use in high-power applications. The transistor is available in a surface-mount package, which makes it easy to integrate into a wide range of electronic devices.

Features:

  • High breakdown voltage: The DMP10H4D2S-7 has a high breakdown voltage, which makes it suitable for use in high-power applications.
  • Low on-resistance: The transistor has a low on-resistance, which allows it to operate efficiently and effectively.
  • Surface-mount package: The DMP10H4D2S-7 is available in a surface-mount package, which makes it easy to integrate into a wide range of electronic devices.
  • High-frequency operation: The transistor is designed for high-frequency operation, making it suitable for use in applications that require high-speed switching.

Applications:

The DMP10H4D2S-7 is suitable for use in a wide range of applications, including:

  • Power amplifiers: The high-power and high-frequency capabilities of the DMP10H4D2S-7 make it an ideal choice for use in power amplifiers.
  • Switching regulators: The low on-resistance and high breakdown voltage of the transistor make it suitable for use in switching regulators.
  • Motor drivers: The DMP10H4D2S-7 can be used in motor driver applications, where high power and high voltage are required.
  • RF power amplifiers: The transistor's high-frequency capabilities make it suitable for use in RF power amplifiers.

Overall, the DMP10H4D2S-7 is a high-power transistor that is designed for use in a wide range of applications. Its high breakdown voltage, low on-resistance, and high-frequency capabilities make it an ideal choice for use in power amplifiers, switching regulators, motor drivers, and RF power amplifiers.

FAQ

What voltage specification is listed for DMP10H4D2S-7?
The listed voltage-related specification for DMP10H4D2S-7 is 100 V.
What is the mounting type of DMP10H4D2S-7?
What operating temperature range does DMP10H4D2S-7 support?
Are there related or alternative parts for DMP10H4D2S-7?
Does DMP10H4D2S-7 have quantity-based pricing?
Availability (In Stock : 15805 )
Quantity Unit Price Ext. Price
50+ $0.07141 $3.57
150+ $0.06275 $9.41
500+ $0.05623 $28.12
3000+ $0.04963 $148.89
6000+ $0.04703 $282.18
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