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DMP6180SK3Q-13

DMP6180SK3Q-13 is a high-performance, high-voltage, and high-power MOSFET transistor manufactured by Diodes Incorporated. It is designed for use in a variety of applications, including power switching, motor control, and energy management.

Description:

The DMP6180SK3Q-13 is an N-channel MOSFET transistor with a breakdown voltage (V(BR)) of -100V. It has a continuous drain current (I(D)) of 4.3A and a pulsed drain current (I(D)) of 13A. The device has a low on-state resistance (R(DS(ON))) of 4.2 mOhm max, which allows for efficient power switching. The transistor also has a fast switching speed, with a typical gate charge (Q(G)) of 34nC and a gate-source threshold voltage (V(GS(TH))) of 2.5V min.

Features:

1. High breakdown voltage (-100V)
2. High continuous and pulsed drain current ratings
3. Low on-state resistance (4.2 mOhm max)
4. Fast switching speed with low gate charge (34nC) and low gate-source threshold voltage (2.5V min)
5. Suitable for use in power switching, motor control, and energy management applications

Applications:

1. Power switching in battery chargers, power supplies, and motor drivers
2. Motor control in industrial automation, robotics, and automotive applications
3. Energy management in renewable energy systems, such as solar panel power conditioning and energy storage systems
4. Load switching and current limiting in various electronic devices

The DMP6180SK3Q-13 is available in a surface-mount package, making it suitable for use in compact and densely populated electronic designs. Its high performance and versatility make it a popular choice for engineers and designers working on power electronics projects.