Diodes Incorporated_DMT10H009SPS-13
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Diodes Incorporated
DMT10H009SPS-13

278-DMT10H009SPS-13
PDF Datasheet
MOSFET N-CH 100V PWRDI5060
8 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
25.1
Input Capacitance (Ciss) (Max) @ Vds
2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Typical Rise Time (ns)
13.7
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
9.7
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DMT10H009SPS-13 Description

DMT10H009SPS-13 Description

The DMT10H009SPS-13 is a high-performance N-Channel Power MOSFET from Diodes Incorporated, designed for a wide range of applications in the electronics industry. This MOSFET is manufactured using advanced Metal Oxide technology, ensuring superior performance and reliability. With a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 14A at 25°C, the DMT10H009SPS-13 is ideal for applications requiring high power and efficiency.

DMT10H009SPS-13 Features

  • Input Capacitance (Ciss): 2085 pF @ 50V, ensuring fast switching speeds and minimal signal distortion.
  • Gate Charge (Qg): 30 nC @ 10V, reducing power consumption and improving efficiency.
  • Rds On (Max): 8.5 mOhm @ 20A, 10V, providing low on-resistance for minimal power loss.
  • Vgs(th) (Max): 4V @ 250µA, ensuring reliable device operation.
  • Power Dissipation (Max): 1.3W (Ta), allowing for efficient heat management.
  • Mounting Type: Surface Mount, enabling compact and space-saving designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in various environmental conditions.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

DMT10H009SPS-13 Applications

The DMT10H009SPS-13 is ideal for a variety of applications where high power and efficiency are critical. Some specific use cases include:

  1. Power Supplies: The high Vdss and low Rds On make it suitable for high-power switching applications in power supplies.
  2. Motor Control: The low gate charge and high Id make it ideal for motor control applications, ensuring efficient and reliable operation.
  3. Automotive Electronics: The DMT10H009SPS-13's robustness and high power capabilities make it suitable for automotive electronics, such as in-vehicle power management systems.
  4. Industrial Control Systems: The device's high power handling and low on-resistance make it ideal for industrial control systems, where reliability and efficiency are paramount.

Conclusion of DMT10H009SPS-13

The DMT10H009SPS-13 from Diodes Incorporated is a high-performance N-Channel Power MOSFET that offers exceptional performance, reliability, and efficiency. Its unique features, such as low on-resistance, high input capacitance, and compliance with environmental regulations, make it an ideal choice for a wide range of applications in the electronics industry. With its robust performance and versatility, the DMT10H009SPS-13 is a valuable addition to any high-power, high-efficiency design.

FAQ

What is the standard lead time for DMT10H009SPS-13?
The standard lead time for DMT10H009SPS-13 is 8 Weeks.
What voltage specification is listed for DMT10H009SPS-13?
Does DMT10H009SPS-13 have quantity-based pricing?
What operating temperature range does DMT10H009SPS-13 support?
What package or case is DMT10H009SPS-13 available in?
Availability (In Stock : 882 )
Quantity Unit Price Ext. Price
1+ $0.75943 $0.76
10+ $0.66857 $6.69
30+ $0.62228 $18.67
100+ $0.57772 $57.77
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