Diodes Incorporated_DMT35M4LFDF-7
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Diodes Incorporated
DMT35M4LFDF-7

278-DMT35M4LFDF-7
PDF Datasheet
MOSFET BVDSS: 25V~30V U-DFN2020-
8 Weeks

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Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
15
Input Capacitance (Ciss) (Max) @ Vds
1009 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
14.9 nC @ 10 V
Typical Rise Time (ns)
4.4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
3.6
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DMT35M4LFDF-7 Description

DMT35M4LFDF-7 Description

The DMT35M4LFDF-7 is a high-performance MOSFET from Diodes Incorporated, designed for applications requiring robust power management and efficient switching capabilities. This device features a MOSFET (Metal Oxide) technology, offering excellent electrical characteristics and reliability. With a drain to source voltage (Vdss) of 30 V and a continuous drain current (Id) of 13A at 25°C, the DMT35M4LFDF-7 is well-suited for a wide range of power electronic applications.

DMT35M4LFDF-7 Features

  • Input Capacitance (Ciss): The DMT35M4LFDF-7 boasts a maximum input capacitance of 1009 pF at 15 V, ensuring fast switching speeds and reduced power consumption.
  • Gate Charge (Qg): With a maximum gate charge of 14.9 nC at 10 V, this MOSFET minimizes switching losses and improves overall efficiency.
  • Rds On (Max): The device offers a low on-resistance of 6 mΩ at 20A and 10V, enabling high current flow with minimal power dissipation.
  • Vgs(th) (Max): A maximum threshold voltage of 2.5V at 250µA ensures reliable operation and consistent performance.
  • Power Dissipation (Max): The DMT35M4LFDF-7 can handle up to 860mW of power dissipation, making it suitable for high-power applications.
  • Mounting Type: The surface mount design allows for easy integration into compact electronic devices.

DMT35M4LFDF-7 Applications

The DMT35M4LFDF-7 is ideal for various applications where high power handling, low on-resistance, and fast switching are required. Some specific use cases include:

  1. Power Supplies: The device's high Vdss and low Rds On make it an excellent choice for power supply designs, ensuring efficient power delivery and minimal power loss.
  2. Motor Control: With its high current handling capabilities, the DMT35M4LFDF-7 is well-suited for motor control applications, providing precise control and efficient operation.
  3. Automotive Electronics: The robust design and high power dissipation capabilities make this MOSFET ideal for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of DMT35M4LFDF-7

The DMT35M4LFDF-7 from Diodes Incorporated is a versatile and high-performance MOSFET, offering a combination of low on-resistance, high power handling, and fast switching capabilities. Its unique features, such as low input capacitance and gate charge, make it an excellent choice for a wide range of power electronic applications, including power supplies, motor control, and automotive electronics. With its compact surface mount design and adherence to industry standards like RoHS3 compliance and REACH unaffected status, the DMT35M4LFDF-7 is a reliable and efficient solution for demanding electronic designs.

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