Diodes Incorporated_DMT6009LK3-13
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Diodes Incorporated
DMT6009LK3-13

278-DMT6009LK3-13
PDF Datasheet
MOSFET N-CH 60V 13.3A/57A TO252
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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
35.9
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
33.5 nC @ 10 V
Typical Rise Time (ns)
8.6
PPAP
No
Channel Mode
Enhancement
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DMT6009LK3-13 Description

DMT6009LK3-13 Description

The DMT6009LK3-13 is a high-performance MOSFET N-CH 60V 13.3A/57A TO252 from Diodes Incorporated. This single FET is designed for applications requiring high power dissipation, low on-resistance, and fast switching capabilities. With a maximum drain-source voltage of 60V and a continuous drain current of 13.3A at 25°C, the DMT6009LK3-13 delivers exceptional performance in demanding electronic systems.

DMT6009LK3-13 Features

  • Technology: MOSFET (Metal Oxide) - Offers high input impedance and low noise characteristics.
  • Input Capacitance (Ciss): 1925 pF @ 30V - Minimizes capacitive loading on the driving circuit.
  • Gate Charge (Qg): 33.5 nC @ 10V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 10mOhm @ 13.5A, 10V - Provides low on-resistance for high current applications.
  • Vgs(th) (Max): 2V @ 250µA - Ensures reliable gate threshold voltage for consistent operation.
  • Power Dissipation (Max): 2.6W (Ta) - Suitable for high-power applications.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) designs.
  • Package: Tape & Reel (TR) - Ideal for automated assembly processes.

DMT6009LK3-13 Applications

The DMT6009LK3-13 is ideal for a wide range of applications, including:

  1. Power Management: In power supply designs, the DMT6009LK3-13's high power dissipation and low on-resistance make it suitable for high-efficiency power conversion.
  2. Motor Control: The device's fast switching capabilities and high current handling make it an excellent choice for motor drive applications.
  3. Industrial Automation: The DMT6009LK3-13's robust performance and reliability make it suitable for use in industrial control systems and automation equipment.
  4. Automotive Electronics: The device's ability to handle high voltages and currents makes it ideal for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of DMT6009LK3-13

The DMT6009LK3-13 from Diodes Incorporated is a high-performance MOSFET designed for demanding applications requiring high power dissipation, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for power management, motor control, industrial automation, and automotive electronics applications. With its robust performance and reliability, the DMT6009LK3-13 is a versatile and efficient solution for engineers designing high-power electronic systems.

FAQ

What operating temperature range does DMT6009LK3-13 support?
DMT6009LK3-13 has an operating temperature range of -55°C ~ 150°C (TJ).
What voltage specification is listed for DMT6009LK3-13?
What is the mounting type of DMT6009LK3-13?
Is DMT6009LK3-13 currently in stock?
Are there related or alternative parts for DMT6009LK3-13?
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