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DMT6012LSS-13

DMT6012LSS-13 Description

The DMT6012LSS-13 is a high-performance MOSFET (Metal Oxide) device designed and manufactured by Diodes Incorporated. This Single FET is part of the MOSFETs category and is currently active in the market. With a drain to source voltage (Vdss) of 60 V and a continuous drain current (Id) of 10.4A at 25°C, the DMT6012LSS-13 is designed for high-power applications.

DMT6012LSS-13 Features

• Technology: MOSFET (Metal Oxide) - offering high efficiency and low power consumption.
• Input Capacitance (Ciss): 1522 pF @ 30 V - ensuring fast switching speeds.
• Gate Charge (Qg): 22.2 nC @ 10 V - reducing switching losses.
• Rds On (Max): 11 mOhm @ 10A, 10V - providing low on-resistance for high efficiency.
• Vgs(th) (Max): 2V @ 250µA - ensuring reliable threshold voltage performance.
• Power Dissipation (Max): 1.2W (Ta) - suitable for power applications.
• Mounting Type: Surface Mount -。
• Package: Tape & Reel (TR) - facilitating automated handling and placement.

DMT6012LSS-13 Applications

The DMT6012LSS-13 is ideal for applications that require high power and efficiency, such as:

• Power Management: In power supply units and battery management systems.
• Motor Control: For electric vehicles, industrial automation, and robotics.
• High-Efficiency Converters: In applications requiring low power loss and high reliability.

Conclusion of DMT6012LSS-13

The DMT6012LSS-13 stands out due to its high drain-source voltage, low on-resistance, and fast switching capabilities. Its surface mount packaging and tape & reel delivery make it suitable for high-volume, automated assembly processes. This MOSFET is an excellent choice for designers looking to optimize power efficiency and performance in their high-power electronic systems.