Diodes Incorporated_DMTH10H2M2LPSWQ-13
original

Diodes Incorporated
DMTH10H2M2LPSWQ-13

278-DMTH10H2M2LPSWQ-13
PDF Datasheet
MOSFET BVDSS: 61V~100V POWERDI50
28 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

HTS
EA
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6239 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
116 nC @ 10 V
Product Status
Active
Supplier Device Package
PowerDI5060-8 (Type UX)
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
4W (Ta), 150W (Tc)
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DMTH10H2M2LPSWQ-13 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the DMTH10H2M2LPSWQ-13 belongs to can be classified under the Discrete Semiconductors. DMTH10H2M2LPSWQ-13 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. DMTH10H2M2LPSWQ-13 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Diodes Incorporated plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Diodes Incorporated is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Diodes Incorporated builds trust with consumers and enhances the overall reputation of their products.

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