Diodes Incorporated
DXT5551P5-13

276-DXT5551P5-13
PDF Datasheet
TRANS NPN 160V 0.6A POWERDI5
8 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Configuration
Single
PPAP
No
Maximum Base Emitter Saturation Voltage (V)
1.2@5mA@50mA|1@1mA@10mA
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
160 V
Automotive
No
Supplier Package
PowerDI 5
Transistor Type
NPN
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DXT5551P5-13 Description

DXT5551P5-13 Description

The DXT5551P5-13 is a high-performance NPN transistor from Diodes Incorporated, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 160V and a maximum collector current of 600mA, this device delivers outstanding performance in power management and amplification tasks. The Surface Mount packaging ensures efficient heat dissipation and easy integration into complex circuit designs.

DXT5551P5-13 Features

  • 130MHz Frequency Transition: The DXT5551P5-13 can handle high-frequency signals, making it ideal for applications requiring rapid switching and signal processing.
  • 2.25W Maximum Power: This transistor can dissipate up to 2.25W of power, enabling it to handle demanding power management tasks in various electronic devices.
  • NPN Transistor Type: The NPN configuration provides excellent current gain and switching characteristics, suitable for a wide range of amplification and switching applications.
  • PowerDI™ 5 Package: The compact PowerDI™ 5 package offers efficient heat dissipation and space-saving advantages in high-density circuit designs.
  • RoHS3 Compliance: The DXT5551P5-13 adheres to the RoHS3 directive, making it suitable for environmentally conscious designs and applications.

DXT5551P5-13 Applications

The DXT5551P5-13 is an excellent choice for applications requiring high power handling and fast switching capabilities. Some specific use cases include:

  1. Power Amplifiers: The high power dissipation and current handling capabilities make it ideal for power amplifiers in audio systems and communication equipment.
  2. Switching Regulators: The fast switching speed and low saturation voltage make it suitable for high-efficiency switching regulators in power supply designs.
  3. RF Amplifiers: The high-frequency transition capability allows it to be used in RF amplifiers for wireless communication systems.

Conclusion of DXT5551P5-13

The DXT5551P5-13 is a versatile and powerful NPN transistor from Diodes Incorporated, offering a combination of high power handling, fast switching, and compact packaging. Its unique features and performance benefits make it an ideal choice for a wide range of applications in the electronics industry, including power amplifiers, switching regulators, and RF amplifiers. With its RoHS3 compliance and high reliability, the DXT5551P5-13 is a trusted solution for demanding electronic designs.

FAQ

Are there related or alternative parts for DXT5551P5-13?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is DXT5551P5-13 available in?
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Availability (In Stock : 12415 )
Quantity Unit Price Ext. Price
50+ $0.23165 $11.58
150+ $0.21740 $32.61
500+ $0.19012 $95.06
2500+ $0.18220 $455.50
5000+ $0.17744 $887.20
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