


Diodes Incorporated
MMBT5551
276-MMBT5551
PDF Datasheet
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23
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Responsible qualityTech Specifications
Category
Bipolar Small Signal
Configuration
Single
PCB changed
3
HTS
8541.21.00.75
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
160
ECCN (US)
EAR99
PPAP
No
MMBT5551 Description
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23
FAQ
What is MMBT5551?
MMBT5551 is a Single Bipolar Transistors from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is MMBT5551 available in?
What operating temperature range does MMBT5551 support?
Is MMBT5551 currently in stock?
Are there related or alternative parts for MMBT5551?



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