Diodes Incorporated_ZTX694BSTZ
original

Diodes Incorporated
ZTX694BSTZ

276-ZTX694BSTZ
PDF Datasheet
TRANS NPN 120V 0.5A E-LINE
40 Weeks

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Tech Specifications

Configuration
Single
PPAP
No
Maximum Base Emitter Saturation Voltage (V)
0.9@10mA@1A
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
120 V
Automotive
No
Supplier Package
E-Line
Transistor Type
NPN
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ZTX694BSTZ Description

ZTX694BSTZ Description

The ZTX694BSTZ is a high-performance NPN transistor from Diodes Incorporated, designed for various electronic applications. It boasts a 130MHz transition frequency, making it suitable for high-speed switching and amplification tasks. With a maximum collector current of 500mA and a collector-emitter breakdown voltage of 120V, this device can handle significant power levels while maintaining reliability. The ZTX694BSTZ features a low saturation voltage of 500mV at 5mA and 400mA, ensuring efficient operation in low-voltage circuits.

ZTX694BSTZ Features

  • High Frequency Performance: The ZTX694BSTZ's 130MHz transition frequency makes it ideal for high-speed switching and amplification applications.
  • Robust Power Handling: Capable of handling up to 500mA of collector current and 1W of power, this transistor is suitable for demanding power applications.
  • Low Saturation Voltage: The low Vce saturation voltage of 500mV at 5mA and 400mA ensures efficient operation in low-voltage circuits.
  • NPN Transistor Type: As an NPN transistor, the ZTX694BSTZ is well-suited for a wide range of electronic circuits, including amplifiers and switches.
  • Through Hole Mounting: The through-hole mounting type provides a secure and reliable connection in various PCB designs.
  • Compliance: The ZTX694BSTZ is compliant with RoHS3 regulations, making it an environmentally friendly choice for electronic designs.

ZTX694BSTZ Applications

The ZTX694BSTZ's unique combination of high-frequency performance, robust power handling, and low saturation voltage make it an ideal choice for various applications:

  1. Amplifiers: The high transition frequency and low saturation voltage make this transistor suitable for audio and RF amplifiers.
  2. Switches: The NPN configuration and high current handling capabilities make it an excellent choice for high-speed switching applications.
  3. Power Electronics: The 1W power rating and 120V collector-emitter breakdown voltage make it suitable for power electronic circuits, such as motor drivers and power supplies.

Conclusion of ZTX694BSTZ

In conclusion, the ZTX694BSTZ is a versatile and high-performance NPN transistor from Diodes Incorporated. Its combination of high-frequency performance, robust power handling, and low saturation voltage make it an ideal choice for a wide range of electronic applications, including amplifiers, switches, and power electronics. With its compliance with RoHS3 regulations and through-hole mounting, the ZTX694BSTZ is a reliable and environmentally friendly option for your next electronic design.

FAQ

What package or case is ZTX694BSTZ available in?
ZTX694BSTZ is available in the E-Line-3, Formed Leads package / case.
Does ZTX694BSTZ have quantity-based pricing?
Are there related or alternative parts for ZTX694BSTZ?
What is the standard lead time for ZTX694BSTZ?
What voltage specification is listed for ZTX694BSTZ?
Availability (In Stock : 55 )
Quantity Unit Price Ext. Price
1+ $1.72115 $1.72
10+ $1.68857 $16.89
30+ $1.66800 $50.04
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