


Diodes Incorporated
ZVN3310A
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ZVN3310A Description
ZVN3310A Description
The ZVN3310A is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. This N-Channel, 100V, 200mA TO92-3 packaged transistor is designed for various applications in the electronics industry. With its unique features and advantages, it stands out among similar models. The ZVN3310A is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1, making it an environmentally friendly choice.
ZVN3310A Features
- Input Capacitance (Ciss): 40 pF @ 25 V
- Drain to Source Voltage (Vdss): 100 V
- Power Dissipation (Max): 625 mW (Ta)
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
ZVN3310A Applications
The ZVN3310A is ideal for various applications, including:
- General Purpose Applications: Its versatility makes it suitable for a wide range of general-purpose electronics projects.
- Power Electronics: The high drain-source voltage and power dissipation capabilities make it suitable for power electronics applications.
- Automotive Electronics: The ZVN3310A can be used in automotive electronics for various control and power management functions.
- Industrial Control Systems: Its robustness and reliability make it suitable for use in industrial control systems.
Conclusion of ZVN3310A
The ZVN3310A is a high-quality, reliable MOSFET device from Diodes Incorporated. Its unique features, such as low input capacitance, high drain-source voltage, and low Rds On, make it an excellent choice for various applications in the electronics industry. With its environmental compliance and robust performance, the ZVN3310A is a superior option for designers and engineers looking for a reliable and efficient MOSFET solution.



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