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ZVN3310FTA

ZVN3310FTA Description

The ZVN3310FTA is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. It is a single N-Channel FET with a drain-source voltage (Vdss) of 100V, making it suitable for various high-voltage applications. The device is currently active and compliant with the latest environmental regulations, including REACH and RoHS3.

ZVN3310FTA Features

• Input Capacitance (Ciss): The ZVN3310FTA has a maximum input capacitance of 40 pF at 25V, ensuring fast switching and minimal capacitive loading.
• Power Dissipation: The device can handle a maximum power dissipation of 330mW at ambient temperature (Ta), making it suitable for power-sensitive applications.
• Rds On (Max): With a maximum on-resistance of 10 Ohms at 500mA and 10V, the ZVN3310FTA offers low power loss and high efficiency.
• Vgs (Max): The device can operate with a maximum gate-source voltage of ±20V, providing flexibility in gate drive requirements.
• Moisture Sensitivity Level (MSL): The ZVN3310FTA has an MSL of 1, indicating unlimited storage time before reflow soldering, which simplifies logistics and inventory management.
• Mounting Type: The device is surface-mount, making it ideal for compact and space-constrained designs.

ZVN3310FTA Applications

The ZVN3310FTA is ideal for a wide range of applications, including:

• Power Management: Due to its high voltage and low on-resistance, the ZVN3310FTA is suitable for power management circuits in consumer electronics and industrial equipment.
• Automotive Electronics: The device's high voltage rating and robustness make it suitable for automotive electronics, such as power windows, seat controls, and lighting systems.
• Telecommunications: The ZVN3310FTA can be used in telecommunications equipment for signal amplification and power distribution.

Conclusion of ZVN3310FTA

The ZVN3310FTA is a versatile and high-performance MOSFET from Diodes Incorporated. Its unique combination of high voltage rating, low on-resistance, and compliance with environmental regulations make it an excellent choice for a wide range of applications. The device's robust performance and reliability make it a preferred choice for engineers looking for a dependable N-Channel FET solution.