Diodes Incorporated_ZXM61N02FTA
original

Diodes Incorporated
ZXM61N02FTA

278-ZXM61N02FTA
PDF Datasheet
MOSFET N-CH 20V 1.7A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
7.8
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V
Typical Rise Time (ns)
4.2
PPAP
No
Channel Mode
Enhancement
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ZXM61N02FTA Description

ZXM61N02FTA Description

The ZXM61N02FTA is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated, designed to meet the demands of modern electronic applications. This Single N-Channel FET offers a range of advanced features and specifications that make it an ideal choice for a variety of applications.

ZXM61N02FTA Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 930mA, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 15 V
  • Vgs (Max): ±12V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Power Dissipation (Max): 625mW (Ta)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.21.0095
  • Base Product Number: ZXM61N02

ZXM61N02FTA Applications

The ZXM61N02FTA is well-suited for a variety of applications where high performance and reliability are crucial. Some specific use cases include:

  1. Power Electronics: Due to its high drain current and low on-resistance, the ZXM61N02FTA is ideal for power management applications in consumer electronics and industrial equipment.
  2. Automotive Electronics: The device's robustness and ability to handle high voltages make it suitable for automotive applications, such as electric vehicle charging systems and powertrain control.
  3. Telecommunications: In telecommunications infrastructure, the ZXM61N02FTA can be used for signal amplification and power management, benefiting from its low gate charge and fast switching capabilities.
  4. Industrial Control Systems: For applications requiring precise control and high efficiency, such as motor drives and robotic systems, the ZXM61N02FTA provides the necessary performance.

Conclusion of ZXM61N02FTA

The ZXM61N02FTA from Diodes Incorporated stands out as a superior MOSFET solution for applications demanding high performance, reliability, and efficiency. Its unique combination of low on-resistance, high drain current, and fast switching capabilities make it an excellent choice for power electronics, automotive, telecommunications, and industrial control systems. With its REACH unaffected status and RoHS3 compliance, the ZXM61N02FTA is not only a high-performing device but also an environmentally responsible choice.

FAQ

What operating temperature range does ZXM61N02FTA support?
ZXM61N02FTA has an operating temperature range of -55°C ~ 150°C (TJ).
What package or case is ZXM61N02FTA available in?
Does ZXM61N02FTA have quantity-based pricing?
What is ZXM61N02FTA?
Is ZXM61N02FTA currently in stock?
Availability (In Stock : 16039 )
Quantity Unit Price Ext. Price
50+ $0.22463 $11.23
150+ $0.19859 $29.79
500+ $0.16608 $83.04
3000+ $0.13956 $418.68
6000+ $0.13087 $785.22
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