Diodes Incorporated_ZXMN2B01FTA
original

Diodes Incorporated
ZXMN2B01FTA

278-ZXMN2B01FTA
PDF Datasheet
MOSFET N-CH 20V 2.1A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
17.8
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 4.5 V
Typical Rise Time (ns)
3.6
PPAP
No
Channel Mode
Enhancement
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ZXMN2B01FTA Description

ZXMN2B01FTA Description

The ZXMN2B01FTA is a high-performance MOSFET N-CH 20V 2.1A SOT23-3 transistor manufactured by Diodes Incorporated. This single FET is designed for applications requiring efficient power management and high-speed switching. With its advanced MOSFET technology, the ZXMN2B01FTA offers superior performance, reliability, and energy efficiency.

ZXMN2B01FTA Features

  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
  • Product Status: Active
  • Drain to Source Voltage (Vdss): 20 V
  • Power Dissipation (Max): 625mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Manufacturer: Diodes Incorporated
  • Vgs (Max): ±8V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • HTSUS: 8541.21.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: ZXMN2

The ZXMN2B01FTA's unique features include its low gate charge, low input capacitance, and high drain current, making it ideal for high-speed switching applications. Its low Rds On and high Vdss ratings provide efficient power management in various electronic devices.

ZXMN2B01FTA Applications

The ZXMN2B01FTA is suitable for a wide range of applications, including:

  1. Power Management: Its high Vdss and low Rds On ratings make it ideal for power management circuits in consumer electronics, industrial equipment, and automotive systems.
  2. High-Speed Switching: The low gate charge and input capacitance enable fast switching speeds, making it suitable for high-frequency applications such as communication devices and signal processing systems.
  3. Automotive Systems: The ZXMN2B01FTA's high Vdss and robust performance make it suitable for automotive applications, such as power windows, seat controls, and lighting systems.

Conclusion of ZXMN2B01FTA

The ZXMN2B01FTA is a versatile and high-performance MOSFET N-CH 20V 2.1A SOT23-3 transistor from Diodes Incorporated. Its unique combination of low gate charge, low input capacitance, and high drain current makes it an ideal choice for high-speed switching and power management applications. With its robust performance and compliance with industry standards, the ZXMN2B01FTA is a reliable solution for various electronic devices and systems.

FAQ

Does ZXMN2B01FTA have quantity-based pricing?
Yes. ZXMN2B01FTA currently has 3 pricing tier(s), starting from 5 units.
What voltage specification is listed for ZXMN2B01FTA?
What package or case is ZXMN2B01FTA available in?
What operating temperature range does ZXMN2B01FTA support?
Is ZXMN2B01FTA currently in stock?
Availability (In Stock : 136 )
Quantity Unit Price Ext. Price
5+ $0.12348 $0.62
50+ $0.12107 $6.05
150+ $0.11945 $17.92
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