Diodes Incorporated_ZXTN2010ZTA
original

Diodes Incorporated
ZXTN2010ZTA

276-ZXTN2010ZTA
PDF Datasheet
TRANS NPN 60V 5A SOT89-3
8 Weeks

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Tech Specifications

Configuration
Single Dual Collector
PPAP
No
Maximum Base Emitter Saturation Voltage (V)
1.1@300mA@6A
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
60 V
Automotive
No
Supplier Package
SOT-89
Transistor Type
NPN
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ZXTN2010ZTA Description

ZXTN2010ZTA Description

The ZXTN2010ZTA is a high-performance NPN bipolar transistor designed and manufactured by Diodes Incorporated. This device is known for its exceptional electrical characteristics, making it an ideal choice for various applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 5A, the ZXTN2010ZTA can handle demanding power requirements. Its surface-mount packaging and SOT89-3 configuration make it suitable for space-constrained designs.

ZXTN2010ZTA Features

  • 130MHz Frequency Transition: The ZXTN2010ZTA's high-frequency capability allows it to operate efficiently in applications requiring fast switching speeds.
  • 5A Maximum Collector Current: This high current rating enables the transistor to handle substantial power loads, making it suitable for power amplifiers and other high-current applications.
  • Low Vce Saturation: With a maximum Vce saturation of 230mV at 300mA and 6A, the ZXTN2010ZTA offers low power dissipation and high efficiency.
  • NPN Transistor Type: The NPN configuration provides excellent current gain and switching characteristics, making it ideal for a wide range of applications.
  • 2.1W Maximum Power: The ZXTN2010ZTA can dissipate up to 2.1W of power, ensuring reliable operation in high-power applications.
  • RoHS3 Compliance: This transistor meets the stringent RoHS3 environmental standards, making it suitable for environmentally conscious designs.

ZXTN2010ZTA Applications

The ZXTN2010ZTA's unique combination of high power handling, low saturation voltage, and high-frequency capabilities make it ideal for various applications, including:

  • Power Amplifiers: The high current and power ratings make it suitable for use in audio and radio frequency power amplifiers.
  • Switching Regulators: The low Vce saturation and high-frequency capabilities make it an excellent choice for switching regulators in power supply designs.
  • Automotive Applications: The ZXTN2010ZTA's ability to handle high currents and voltages makes it suitable for use in automotive electronics, such as engine control modules and power windows.
  • Industrial Control Systems: The high power and current ratings, combined with the low saturation voltage, make it ideal for use in industrial control systems, such as motor drives and inverters.

Conclusion of ZXTN2010ZTA

In conclusion, the ZXTN2010ZTA is a versatile and high-performance NPN bipolar transistor that offers a unique combination of features, making it an excellent choice for a wide range of applications in the electronics industry. Its high power handling, low saturation voltage, and high-frequency capabilities, combined with its RoHS3 compliance and surface-mount packaging, make it an ideal choice for designers looking for a reliable and efficient solution in their power electronic designs.

FAQ

What operating temperature range does ZXTN2010ZTA support?
ZXTN2010ZTA has an operating temperature range of -55°C ~ 150°C (TJ).
What is the mounting type of ZXTN2010ZTA?
What is the standard lead time for ZXTN2010ZTA?
What voltage specification is listed for ZXTN2010ZTA?
What package or case is ZXTN2010ZTA available in?
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