


Diotec Semiconductor
BC847B
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
BC847B Description
BC847B Description
The BC847B from Diotec Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for surface-mount applications. Packaged in a compact SOT-23 form factor, it offers a robust combination of 45V collector-emitter breakdown voltage (Vceo) and 100mA continuous collector current (Ic), making it suitable for low-power amplification and switching tasks. With a transition frequency (fT) of 300MHz, it delivers excellent high-frequency performance, while its low Vce saturation voltage (600mV @ 5mA, 100mA) ensures efficient operation in switching circuits.
BC847B Features
- High Current Gain (hFE): Minimum 200 @ 2mA, 5V, ensuring reliable signal amplification.
- Low Leakage Current: Collector cutoff current (Iceo) as low as 100nA, enhancing power efficiency.
- Compact & Reliable: SOT-23 package with 250mW max power dissipation, ideal for space-constrained designs.
- Wide Voltage Range: 45V Vceo accommodates diverse circuit requirements.
- RoHS & REACH Compliance: Meets environmental standards, though RoHS status is "Not Applicable" per manufacturer data.
- High Transition Frequency: 300MHz fT supports RF and high-speed switching applications.
BC847B Applications
The BC847B excels in:
- Signal Amplification: Audio preamps, sensor interfaces, and low-noise analog circuits.
- Switching Circuits: Load drivers, relay control, and digital logic interfaces.
- RF Stages: Oscillators and mixers in communication systems (up to 300MHz).
- Portable Electronics: Battery-powered devices due to low saturation voltage and leakage.
- Automotive & Industrial Systems: Robust performance in harsh environments (non-inductive loads).
Conclusion of BC847B
The BC847B stands out for its balanced performance in amplification and switching, combining high-speed operation, low power loss, and compact packaging. Its 200+ hFE and 300MHz fT make it superior to generic NPN transistors in gain-critical and high-frequency applications. While not RoHS-certified, its EAR99 classification ensures broad exportability. Engineers favor this transistor for cost-sensitive, high-reliability designs in consumer, industrial, and automotive electronics.



.png)









.png?x-oss-process=image/format,webp/resize,h_32)










