EIC Semiconductor, Inc._30KP350CA
original

EIC Semiconductor, Inc.
30KP350CA

144-30KP350CA
PDF Datasheet
TVS Diode Single Bi-Dir 350V 30KW 2-Pin Case D-6

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Tech Specifications

Peak Pulse Power Dissipation (W)
30000
Configuration
Single
PCB changed
2
HTS
8541.10.00.80
Number of Elements per Chip
1
ECCN (US)
EAR99
Minimum Breakdown Voltage (V)
389
PPAP
No
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30KP350CA Description

TVS Diode Single Bi-Dir 350V 30KW 2-Pin Case D-6

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