

EIC Semiconductor, Inc.
30KP350CA
144-30KP350CA
PDF Datasheet
TVS Diode Single Bi-Dir 350V 30KW 2-Pin Case D-6
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Responsible qualityTech Specifications
Peak Pulse Power Dissipation (W)
30000
Configuration
Single
PCB changed
2
HTS
8541.10.00.80
Number of Elements per Chip
1
ECCN (US)
EAR99
Minimum Breakdown Voltage (V)
389
PPAP
No
30KP350CA Description
TVS Diode Single Bi-Dir 350V 30KW 2-Pin Case D-6
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30KP350CA is currently available on an inquiry basis. Please contact us for the latest stock information.
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