EIC Semiconductor, Inc._3KE13C
original

EIC Semiconductor, Inc.
3KE13C

144-3KE13C
PDF Datasheet
TVS Diode Single Bi-Dir 10.5V 3KW 2-Pin DO-201

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Tech Specifications

Peak Pulse Power Dissipation (W)
3000(Min)
Configuration
Single
PCB changed
2
HTS
8541.10.00.80
Number of Elements per Chip
1
ECCN (US)
EAR99
Minimum Breakdown Voltage (V)
11.7
PPAP
No
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3KE13C Description

TVS Diode Single Bi-Dir 10.5V 3KW 2-Pin DO-201

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