EIC Semiconductor, Inc._P4KE82
original

EIC Semiconductor, Inc.
P4KE82

144-P4KE82
PDF Datasheet
TVS Diode Single Uni-Dir 66.4V 400W 2-Pin DO-41

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Tech Specifications

Peak Pulse Power Dissipation (W)
400(Min)
Configuration
Single
PCB changed
2
HTS
8541.10.00.80
Number of Elements per Chip
1
ECCN (US)
EAR99
Minimum Breakdown Voltage (V)
73.8
PPAP
No
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P4KE82 Description

TVS Diode Single Uni-Dir 66.4V 400W 2-Pin DO-41

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