Etron Technology_EM6HE08EW3F-12H
original

Etron Technology
EM6HE08EW3F-12H

774-EM6HE08EW3F-12H
IC DRAM 4GBIT PARALLEL 78FBGA
12 Weeks

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Tech Specifications

Clock Frequency
800 MHz
Memory Type
Volatile
Product Status
Active
Supplier Device Package
78-FBGA (9x10.6)
Access Time
20 ns
Package / Case
78-TFBGA
Technology
SDRAM - DDR3L
Voltage - Supply
1.283V ~ 1.45V
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EM6HE08EW3F-12H Description

EM6HE08EW3F-12H Description

The EM6HE08EW3F-12H is a high-performance DRAM memory IC chip designed by Etron Technology, Inc. This 4Gbit (512M x 8) memory device is optimized for parallel data transfer and offers a clock frequency of 800 MHz, ensuring rapid data processing and efficient system performance. The memory is volatile, meaning it retains data only while powered, making it suitable for applications requiring dynamic data handling. The device operates within a supply voltage range of 1.283V to 1.45V, ensuring energy efficiency and compatibility with modern low-power systems.

EM6HE08EW3F-12H Features

  • High Clock Frequency: The 800 MHz clock frequency enables fast data access and transfer rates, crucial for high-speed computing and data-intensive applications.
  • Low Access Time: With an access time of 20 ns and a write cycle time of 15 ns, the EM6HE08EW3F-12H ensures minimal latency, making it ideal for real-time data processing and high-frequency operations.
  • Volatile Memory: As a DRAM device, it provides volatile memory storage, which is essential for applications requiring dynamic and temporary data storage.
  • Wide Operating Temperature Range: The EM6HE08EW3F-12H operates reliably within a temperature range of 0°C to 95°C, making it suitable for both standard and rugged environments.
  • Surface Mount Technology: The surface mount mounting type and 78FBGA package format ensure easy integration into compact and high-density PCB designs.
  • Compliance and Safety: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), the EM6HE08EW3F-12H is designed to withstand moisture exposure during manufacturing and storage, reducing the risk of damage.

EM6HE08EW3F-12H Applications

The EM6HE08EW3F-12H is well-suited for a variety of applications that demand high-speed, dynamic memory solutions. Key use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data buffering and processing.
  • Telecommunications: Suitable for base stations and communication infrastructure where rapid data handling and low latency are critical.
  • Industrial Automation: Provides reliable and efficient memory solutions for industrial control systems and automation equipment.
  • Consumer Electronics: Enhances the performance of gaming consoles, high-end PCs, and other consumer devices that require high-speed memory.

Conclusion of EM6HE08EW3F-12H

The EM6HE08EW3F-12H from Etron Technology, Inc. stands out as a robust and high-performance DRAM memory IC chip. Its combination of a high clock frequency, low access time, and wide operating temperature range makes it an ideal choice for applications requiring dynamic and efficient memory solutions. The device's compliance with environmental and safety standards further enhances its appeal for modern electronics. Whether used in networking, telecommunications, industrial automation, or consumer electronics, the EM6HE08EW3F-12H delivers reliable performance and significant advantages over similar models.

FAQ

What package or case is EM6HE08EW3F-12H available in?
EM6HE08EW3F-12H is available in the 78-TFBGA package / case.
What operating temperature range does EM6HE08EW3F-12H support?
What is the standard lead time for EM6HE08EW3F-12H?
What is the mounting type of EM6HE08EW3F-12H?
Does EM6HE08EW3F-12H have quantity-based pricing?
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