Etron Technology_EM6HE08EW8D-10H
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Etron Technology
EM6HE08EW8D-10H

774-EM6HE08EW8D-10H
IC DRAM 4GBIT PAR 78FBGA

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Tech Specifications

Clock Frequency
933 MHz
Memory Type
Volatile
Product Status
Not For New Designs
Supplier Device Package
78-FBGA (9x10.5)
Access Time
20 ns
Package / Case
78-VFBGA
Technology
SDRAM - DDR3L
Voltage - Supply
1.283V ~ 1.45V
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EM6HE08EW8D-10H Description

EM6HE08EW8D-10H Description

The EM6HE08EW8D-10H is a high-performance DRAM memory IC chip manufactured by Etron Technology, Inc. This 4Gbit (512M x 8) memory device is designed for applications requiring high-speed data access and reliable performance. It features a clock frequency of 933 MHz and an access time of 20 ns, ensuring rapid data retrieval and processing. The memory is organized in a parallel format, providing efficient data transfer capabilities. The EM6HE08EW8D-10H operates within a supply voltage range of 1.283V to 1.45V, making it suitable for low-power applications. It also supports a write cycle time of 15 ns for word and page operations, further enhancing its performance.

EM6HE08EW8D-10H Features

  • High-Speed Performance: With a clock frequency of 933 MHz and an access time of 20 ns, the EM6HE08EW8D-10H delivers fast data access and processing capabilities.
  • Low-Power Operation: The memory operates within a supply voltage range of 1.283V to 1.45V, making it ideal for applications where power efficiency is critical.
  • Volatile Memory: The EM6HE08EW8D-10H is a volatile DRAM device, ensuring data is retained only while power is supplied, which is beneficial for dynamic data storage needs.
  • Parallel Interface: The parallel memory interface allows for efficient data transfer and integration with various system architectures.
  • Compliance and Reliability: The device is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards. It also has a moisture sensitivity level (MSL) of 3 (168 hours), making it suitable for a range of manufacturing environments.
  • Wide Operating Temperature Range: The EM6HE08EW8D-10H operates within a temperature range of 0°C to 95°C (TC), making it suitable for applications in various environmental conditions.

EM6HE08EW8D-10H Applications

The EM6HE08EW8D-10H is ideal for a variety of applications that require high-speed, low-power memory solutions. Some specific use cases include:

  • Networking Equipment: High-speed routers and switches that require rapid data processing and low-latency memory access.
  • Telecommunications: Base stations and communication infrastructure that need reliable and efficient memory for data handling.
  • Industrial Automation: Control systems and monitoring devices that benefit from fast data retrieval and low-power operation.
  • Consumer Electronics: High-performance gaming consoles and multimedia devices that require quick access to large amounts of data.

Conclusion of EM6HE08EW8D-10H

The EM6HE08EW8D-10H is a robust and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its combination of high-speed data access, low-power operation, and compliance with environmental standards makes it a reliable choice for a wide range of applications. While it is not recommended for new designs due to its "Not For New Designs" product status, the EM6HE08EW8D-10H remains a valuable component for existing systems and applications where its unique features and performance benefits are required.

FAQ

What voltage specification is listed for EM6HE08EW8D-10H?
The listed voltage-related specification for EM6HE08EW8D-10H is 1.283V ~ 1.45V.
Does EM6HE08EW8D-10H have quantity-based pricing?
Are there related or alternative parts for EM6HE08EW8D-10H?
What operating temperature range does EM6HE08EW8D-10H support?
Is EM6HE08EW8D-10H currently in stock?
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