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FDMS8690
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FDMS8690 Description
FDMS8690 Description
The FDMS8690 is a high-performance MOSFET N-CH 30V 14A/27A 8MLP from Fairchild Semiconductor. This device is part of the PowerTrench® series and is designed for high-efficiency power management applications. With a maximum drain-source voltage (Vdss) of 30V and continuous drain current (Id) of 14A at 25°C (Ta) and 27A at case temperature (Tc), the FDMS8690 offers excellent electrical performance.
FDMS8690 Features
- High Input Capacitance (Ciss): The FDMS8690 has a maximum input capacitance of 1680 pF at 15V, ensuring fast switching and minimal signal distortion.
- Low Gate Charge (Qg): With a maximum gate charge of 27 nC at 10V, the FDMS8690 minimizes power loss during switching, improving overall efficiency.
- Low Rds On: The device features a maximum Rds On of 9 mOhm at 14A and 10V, reducing conduction losses and improving power efficiency.
- Wide Vgs Range: The FDMS8690 operates with a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in gate drive requirements.
- Surface Mount Packaging: The device is available in a surface-mount package, enabling compact and efficient board layouts.
- ROHS Compliance: The FDMS8690 is compliant with ROHS3, making it suitable for environmentally friendly applications.
FDMS8690 Applications
The FDMS8690 is ideal for a variety of high-power applications, including:
- Power Supplies: The device's high voltage and current ratings make it suitable for power supply designs, such as SMPS and DC-DC converters.
- Motor Control: The FDMS8690's low Rds On and high current capabilities make it an excellent choice for motor control applications, including industrial drives and robotics.
- Automotive: The device's robust performance and reliability make it suitable for automotive applications, such as electric vehicle chargers and power management systems.
- Renewable Energy: The FDMS8690 can be used in renewable energy systems, such as solar inverters and wind turbine power electronics.
Conclusion of FDMS8690
The FDMS8690 is a versatile and high-performance MOSFET designed for demanding power management applications. Its unique combination of high input capacitance, low gate charge, and low Rds On make it an excellent choice for applications requiring high efficiency and reliability. While the device is now considered obsolete, it remains a popular choice for legacy designs and applications where its performance characteristics are critical.



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