Fairchild (onsemi)

FDN335N

FDN335N Description

The FDN335N from Fairchild (now onsemi) is a high-performance N-channel MOSFET designed for small-signal and power management applications. Built using PowerTrench® technology, it delivers low on-resistance (55 mΩ) and high efficiency in a compact SSOT-3 package (2.9 x 1.4 x 1.12 mm). With a 20V drain-source breakdown voltage (Vds) and 1.7A continuous drain current (Id), it is optimized for low-voltage, high-speed switching. The device features a low gate threshold voltage (Vgs th = 400mV) and fast switching characteristics (rise/fall time = 8.5 ns), making it ideal for space-constrained designs requiring minimal power loss.

FDN335N Features

• Low Rds(on): 55 mΩ ensures reduced conduction losses.
• Fast Switching: 8.5 ns rise/fall time and 5 ns turn-on delay enhance efficiency in high-frequency circuits.
• Compact Form Factor: SSOT-3 package (1.12 mm height) suits portable and miniaturized electronics.
• Low Gate Charge (Qg): 5 nC minimizes drive requirements, improving energy efficiency.
• Robust Thermal Performance: 500 mW power dissipation and 150°C max operating temperature.
• RoHS Compliant: Meets environmental standards for modern electronics.

FDN335N Applications

The FDN335N excels in:

• Load Switching: Power management in battery-operated devices (e.g., smartphones, wearables).
• DC-DC Converters: Synchronous rectification in step-down/step-up converters.
• Motor Control: Driver circuits for small brushed DC motors.
• Portable Electronics: Space-sensitive applications like USB power switches or LED drivers.
• Automotive Systems: Low-voltage auxiliary systems due to its reliability and thermal stability.

Conclusion of FDN335N

The FDN335N stands out for its combination of low Rds(on), fast switching, and ultra-compact packaging, making it a superior choice for modern power-efficient designs. Its PowerTrench® technology ensures high performance in demanding environments, while the SSOT-3 package addresses the need for miniaturization. Engineers can leverage this MOSFET in battery-powered, automotive, and high-frequency applications where efficiency and footprint are critical.