Fairchild (onsemi)

FDN360P

FDN360P Description

The FDN360P is a P-Channel Enhancement Mode MOSFET from Fairchild (onsemi), designed for small-signal and power management applications. Built using PowerTrench technology, it offers low Rds(on) of 63 mOhms and a continuous drain current of 2 A, making it highly efficient for switching and amplification tasks. With a drain-source breakdown voltage (Vds) of 30 V and a gate-source threshold voltage (Vgs th) of 3 V, it ensures reliable performance in low-voltage circuits. The device is housed in a compact SSOT-3 package, measuring just 2.9 mm x 1.4 mm x 1.12 mm, ideal for space-constrained designs.

FDN360P Features

• Low Rds(on) (63 mOhms): Minimizes conduction losses, improving efficiency.
• Fast Switching (Rise/Fall Time: 13 ns): Enhances performance in high-frequency applications.
• Low Gate Charge (Qg: 9 nC): Reduces drive power requirements.
• PowerTrench Technology: Delivers superior thermal and electrical performance.
• RoHS Compliant: Meets environmental standards.
• Wide Operating Temperature Range (-55°C to +150°C): Suitable for harsh environments.

FDN360P Applications

The FDN360P excels in:

• DC-DC Converters: Efficient power conversion in portable devices.
• Load Switching: Reliable control in battery-powered systems.
• Motor Drivers: Smooth operation in low-power motor applications.
• Power Management ICs (PMICs): Integration into compact power solutions.
• Automotive Electronics: Due to its robust thermal performance.

Conclusion of FDN360P

The FDN360P stands out for its low on-resistance, fast switching, and compact form factor, making it a top choice for designers seeking efficiency and reliability in space-sensitive applications. Its PowerTrench technology and RoHS compliance further enhance its appeal for modern electronics, from consumer gadgets to automotive systems. Whether used in power management or signal switching, the FDN360P delivers superior performance and durability, setting it apart from conventional P-Channel MOSFETs.