Fairchild (onsemi)_FQPF5N80
original

Fairchild (onsemi)
FQPF5N80

278-FQPF5N80
PDF Datasheet
MOSFET N-CH 800V 2.8A TO220F

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
ECCN
EAR99
Mounting Type
Through Hole
Product Status
Obsolete
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FQPF5N80 Description

FQPF5N80 Description

The FQPF5N80 is an N-channel MOSFET from Fairchild Semiconductor (now onsemi), part of the QFET® series, designed for high-voltage switching applications. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2.8A (at Tc=25°C), this device is optimized for efficiency in power management circuits. It features a low on-resistance (Rds(on)) of 2.6Ω at 10V gate drive, ensuring minimal conduction losses. The MOSFET is housed in a TO-220F package, offering robust thermal performance with a maximum power dissipation of 47W (Tc). Although marked as obsolete, it remains a reliable choice for legacy designs requiring high-voltage capability and low gate charge (Qg(max) = 33nC @ 10V).

FQPF5N80 Features

  • High Voltage Rating: 800V Vdss for demanding applications.
  • Low Gate Charge (Qg): 33nC at 10V reduces switching losses.
  • Low Input Capacitance (Ciss): 1250pF at 25V enhances high-frequency performance.
  • Robust Thermal Design: TO-220F package with 47W power dissipation (Tc).
  • Wide Gate-Source Voltage Range: ±30V Vgs(max) for flexible drive requirements.
  • RoHS3 Compliant: Meets environmental standards.

Compared to similar MOSFETs, the FQPF5N80 stands out for its balanced trade-off between voltage handling and switching efficiency, making it suitable for both linear and switching applications.

FQPF5N80 Applications

  • Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline power supplies.
  • Lighting Systems: Ballasts and LED drivers requiring 800V breakdown capability.
  • Industrial Controls: Motor drives, relay replacements, and solenoid drivers.
  • Energy Management: Auxiliary power circuits in renewable energy systems.
  • Legacy Electronics: Maintenance and repair of older high-voltage designs.

Conclusion of FQPF5N80

The FQPF5N80 is a high-performance N-channel MOSFET tailored for high-voltage, medium-current applications where efficiency and thermal stability are critical. Its low gate charge and robust package make it ideal for power conversion and industrial systems. While obsolete, its proven reliability ensures continued relevance in legacy and specialized designs. Engineers seeking a cost-effective, high-voltage MOSFET with Fairchild’s QFET® technology will find this device a practical solution.

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