Freescale Semiconductor, Inc. (NXP Semiconductors)_MRF6S19100HR3
Freescale Semiconductor, Inc. (NXP Semiconductors)_MRF6S19100HR3
original

Freescale Semiconductor, Inc. (NXP Semiconductors)
MRF6S19100HR3

285-MRF6S19100HR3
PDF Datasheet
RF MOSFET LDMOS 28V NI780

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Tech Specifications

Current Rating (Amps)
-
ECCN
EAR99
Current - Test
900 mA
Voltage - Rated
68 V
Product Status
Active
Power - Output
22W
Supplier Device Package
NI-780H-2L
Series
-
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MRF6S19100HR3 Description

MRF6S19100HR3 Description

The MRF6S19100HR3 is a high-performance LDMOS RF MOSFET designed and manufactured by Freescale Semiconductor, a division of NXP Semiconductors. This device is part of the RF FETs, MOSFETs category and is specifically designed for high-power applications. With a rated voltage of 68V and a test voltage of 28V, it delivers an impressive 22W of output power. The device operates at a frequency of 1.99GHz and boasts a gain of 16.1dB, making it an ideal choice for demanding applications.

MRF6S19100HR3 Features

  • High Power Output: The MRF6S19100HR3 delivers 22W of output power, making it suitable for high-power applications.
  • High Frequency Operation: Operating at 1.99GHz, this device is designed for high-frequency applications.
  • High Gain: With a gain of 16.1dB, the MRF6S19100HR3 offers excellent performance in terms of signal amplification.
  • LDMOS Technology: Leveraging LDMOS technology, this device provides high efficiency and power handling capabilities.
  • RoHS Compliance: The MRF6S19100HR3 is compliant with RoHS3 standards, ensuring environmental responsibility.
  • Low Moisture Sensitivity: With an MSL of 1 (Unlimited), this device is less susceptible to moisture-related issues.

MRF6S19100HR3 Applications

The MRF6S19100HR3 is ideal for a variety of high-power applications, including:

  1. RF Amplifiers: Due to its high power output and gain, this device is well-suited for use in RF amplifiers.
  2. Base Stations: Its high power and frequency capabilities make it an excellent choice for base station applications.
  3. Radar Systems: The MRF6S19100HR3 can be used in radar systems where high power and frequency performance are critical.
  4. Communication Systems: This device is suitable for communication systems that require high power and frequency performance.

Conclusion of MRF6S19100HR3

The MRF6S19100HR3 is a high-performance LDMOS RF MOSFET that offers exceptional power output, frequency performance, and gain. Its RoHS compliance and low moisture sensitivity make it an environmentally responsible choice for high-power applications. With its unique features and advantages, the MRF6S19100HR3 is an ideal solution for demanding applications in RF amplifiers, base stations, radar systems, and communication systems.

FAQ

What is MRF6S19100HR3?
MRF6S19100HR3 is a RF FETs, MOSFETs from Freescale Semiconductor, Inc. (NXP Semiconductors). This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is MRF6S19100HR3 available in?
What voltage specification is listed for MRF6S19100HR3?
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