


Fujitsu
MB85R256FPF-G-BNDE1
774-MB85R256FPF-G-BNDE1
Memory Circuit, 32KX8, CMOS, PDSO28, 8.60 X 17.75 MM, 1.27 MM PITCH, ROHS COMPLIANT, PLASTIC, SOP-28
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Responsible qualityTech Specifications
Access Time
150ns
Package/Case
SOIC
Interface
Parallel
Max Operating Temperature
85°C
Max Supply Voltage
3.6V
Memory Size
256Kb
Memory Type
Non-Volatile, , FRAM
Min Operating Temperature
-40°C
MB85R256FPF-G-BNDE1 Description
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-SOP
FAQ
What voltage specification is listed for MB85R256FPF-G-BNDE1?
The listed voltage-related specification for MB85R256FPF-G-BNDE1 is 3.6V.
Is MB85R256FPF-G-BNDE1 currently in stock?
What is the mounting type of MB85R256FPF-G-BNDE1?
What package or case is MB85R256FPF-G-BNDE1 available in?
What is MB85R256FPF-G-BNDE1?



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