GaNPower_GPI90010DF88
original

GaNPower
GPI90010DF88

278-GPI90010DF88
PDF Datasheet
GaNFET N-CH 900V 10A DFN8x8

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
78 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
2.6 nC @ 6 V
ECCN
3A001
Mounting Type
Surface Mount
Product Status
Active
Rds On (Max) @ Id, Vgs
162mOhm @ 2.5A, 6V
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GPI90010DF88 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GPI90010DF88 belongs to can be classified under the Discrete Semiconductors. GPI90010DF88 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GPI90010DF88 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. GaNPower plays a crucial role in ensuring the smooth flow of goods and meeting market demand. GaNPower is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, GaNPower builds trust with consumers and enhances the overall reputation of their products.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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