Goford Semiconductor_G030N06M
original

Goford Semiconductor
G030N06M

278-G030N06M
PDF Datasheet
MOSFET N-CH 60V 223A TO-263
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
12432 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
101 nC @ 4.5 V
Product Status
Active
Supplier Device Package
TO-263
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
240W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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G030N06M Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the G030N06M belongs to can be classified under the Discrete Semiconductors. G030N06M is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. G030N06M provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

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