Goford Semiconductor_G080N10M
original

Goford Semiconductor
G080N10M

278-G080N10M
PDF Datasheet
MOSFET N-CH 100V 180A TO-263
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
13950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 4.5 V
Product Status
Active
Supplier Device Package
TO-263
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
370W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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G080N10M Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the G080N10M belongs to can be classified under the Discrete Semiconductors. G080N10M is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. G080N10M provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for G080N10M?
The listed voltage-related specification for G080N10M is 100 V.
What is G080N10M?
What package or case is G080N10M available in?
What is the standard lead time for G080N10M?
Is G080N10M currently in stock?
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