Goford Semiconductor_G2K3N10G
original

Goford Semiconductor
G2K3N10G

278-G2K3N10G
PDF Datasheet
N100V, 2.5A,RD<220M@10V,VTH1V~2V
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
436 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Product Status
Active
Supplier Device Package
SOT-89
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
1.5W (Tc)
Package / Case
TO-243AA
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G2K3N10G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the G2K3N10G belongs to can be classified under the Discrete Semiconductors. G2K3N10G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. G2K3N10G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

Are there related or alternative parts for G2K3N10G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for G2K3N10G?
What is the mounting type of G2K3N10G?
What is the standard lead time for G2K3N10G?
What operating temperature range does G2K3N10G support?
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