Goford Semiconductor_GC080N65QF
original

Goford Semiconductor
GC080N65QF

278-GC080N65QF
PDF Datasheet
MOSFET N-CH 650V 50A TO-247
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 380 V
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-247
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
298W (Tc)
Package / Case
TO-247-3
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GC080N65QF Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GC080N65QF belongs to can be classified under the Discrete Semiconductors. GC080N65QF is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GC080N65QF provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What operating temperature range does GC080N65QF support?
GC080N65QF has an operating temperature range of -55°C ~ 150°C (TJ).
Are there related or alternative parts for GC080N65QF?
What is GC080N65QF?
What is the standard lead time for GC080N65QF?
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