Goford Semiconductor_GC20N65F
original

Goford Semiconductor
GC20N65F

278-GC20N65F
PDF Datasheet
N650V,RD(MAX)<170M@10V,VTH2.5V~4
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-220F
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
40W (Tc)
Package / Case
TO-220-3 Full Pack
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GC20N65F Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GC20N65F belongs to can be classified under the Discrete Semiconductors. GC20N65F is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GC20N65F provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

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Yes. GC20N65F currently shows 20000 unit(s) in stock.
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