Goford Semiconductor_GT130N10F
original

Goford Semiconductor
GT130N10F

278-GT130N10F
PDF Datasheet
MOSFET N-CH 100V 45A TO-220F
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1215 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-220F
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
41.7W (Tc)
Package / Case
TO-220-3 Full Pack
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GT130N10F Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GT130N10F belongs to can be classified under the Discrete Semiconductors. GT130N10F is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GT130N10F provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What operating temperature range does GT130N10F support?
GT130N10F has an operating temperature range of -55°C ~ 150°C (TJ).
What voltage specification is listed for GT130N10F?
What is the standard lead time for GT130N10F?
Are there related or alternative parts for GT130N10F?
Is GT130N10F currently in stock?
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